SCHEMBL685956

SCHEMBL685956

C=CC(=O)OC1C(=O)OCC1C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12651232 0.85
SCHEMBL21249296 0.84
SCHEMBL685732 0.84 TSHR (0.32)
SCHEMBL17186178 0.84 POLB (0.33)
SCHEMBL3791418 0.82 EDNRA (0.32)
SCHEMBL1697107 0.82 TSHR (0.36)
SCHEMBL12650667 0.81
SCHEMBL5408979 0.81 CYP3A4 (0.34)
SCHEMBL7608803 0.80
SCHEMBL5872361 0.78 MAPK1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 253 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104334536-A Method for producing beta-(meth)acryloyloxy-gamma-butyrolactone JNC CORP 2015-02-04 CN claimed
CN-113614073-B Polymer, resist composition, method for producing patterned substrate, and method for producing (meth) acrylate 三菱化学株式会社 2024-09-24 CN disclosed
CN-113614073-A Polymer, resist composition, method for producing substrate having pattern formed thereon, and (meth) acrylate and method for producing same 三菱化学株式会社 2021-11-05 CN disclosed
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-20170037169-A1 MANUFACTURING METHOD OF POLYMER TOYO GOSEI CO., LTD. (JP) 2017-02-09 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
CN-102736418-B For the composition of coating on photo-resist pattern 默克专利有限公司 2016-06-08 CN disclosed
CN-100363343-C Photoactive compounds AZ ELECTRONIC MATERIALS USA (US) 2008-01-23 CN disclosed
CN-100354257-C Sulfonate and a resist composition SUMITOMO CHEMICAL CO (JP) 2007-12-12 CN disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed
CN-1791573-A Photoactive compounds AZ ELECTRONIC MATERIALS USA (US) 2006-06-21 CN disclosed
CN-1757670-A Radial sensitive resin composite, microlens and manufacturing method therof and liquid crystal display element JSR CORP (JP) 2006-04-12 CN disclosed
CN-1745114-A Resist polymer and resist composition MITSUBISHI RAYON CO (JP) 2006-03-08 CN disclosed
CN-1576272-A Sulfonate and a resist composition SUMITOMO CHEMICAL CO (JP) 2005-02-09 CN disclosed