SCHEMBL686158

SCHEMBL686158

C=C(C)C(=O)OC1C(=O)OCC1C

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.38
CYP3A4 P08684 1/20 0.32
CYP2D6 P10635 1/20 0.32
TSHR P16473 1/20 0.32
CYP2C19 P33261 1/20 0.32
GPX4 P36969 1/20 0.30
KDM4E B2RXH2 1/20 0.30
NPC1 O15118 1/20 0.30
POLB P06746 1/20 0.30
MAPT P10636 1/20 0.30
PKM P14618 1/20 0.30
HTT P42858 1/20 0.30
RECQL P46063 1/20 0.30
RAB9A P51151 1/20 0.30
ATM Q13315 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14666507 0.85
SCHEMBL685118 0.84 ALDH1A1 (0.41) ALDH1A1CYP3A4CYP2D6TSHRCYP2C19
SCHEMBL3149492 0.83 ALDH1A1 (0.38) ALDH1A1GPX4KDM4ENPC1POLB
SCHEMBL3154695 0.82 ALDH1A1 (0.37) ALDH1A1GPX4
SCHEMBL1697102 0.82 ALDH1A1 (0.39) ALDH1A1CYP3A4CYP2D6TSHRCYP2C19
SCHEMBL12501614 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL12650669 0.81 ALDH1A1 (0.30) ALDH1A1
SCHEMBL3159004 0.81 ALDH1A1 (0.39) ALDH1A1CYP3A4TSHRCYP2C19KDM4E
SCHEMBL3163806 0.81 ALDH1A1 (0.36) ALDH1A1CYP3A4CYP2D6TSHRCYP2C19
SCHEMBL12212157 0.80 ALDH1A1 (0.38) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115565-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115565-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20160231652-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-20020132181-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-09-19 US disclosed
EP-1225480-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-07-24 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR ALDH1A1 4520/4885CYP3A4 4680/4885CYP2D6 4599/4885
US-10377692-B2 Photoresist composition C1R, C1S, F12 ALDH1A1 2217/4885CYP3A4 1582/4885CYP2D6 949/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.