SCHEMBL6865133

SCHEMBL6865133

CN(c1ccccc1)N(C)c1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.52
HTT P42858 1/20 0.52
KMT2A Q03164 1/20 0.52
CA12 O43570 2/20 0.44
CA2 P00918 2/20 0.44
CA9 Q16790 2/20 0.44
FAAH O00519 1/20 0.44
PHGDH O43175 1/20 0.44
MGLL Q99685 1/20 0.44
CA1 P00915 1/20 0.44
L3MBTL1 Q9Y468 2/20 0.42
LMNA P02545 2/20 0.42
ALDH1A1 P00352 5/20 0.42
TSHR P16473 4/20 0.42
NPSR1 Q6W5P4 1/20 0.41
ALOX15 P16050 1/20 0.41
KCNN4 O15554 1/20 0.41
TDP1 Q9NUW8 2/20 0.40
MAPK1 P28482 1/20 0.40
HSD17B10 Q99714 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3565508 0.87 MEN1 (0.55) MEN1HTTKMT2ACA12CA2
SCHEMBL6237199 0.84 MEN1 (0.46) MEN1HTTKMT2ACA12CA2
Hydrochloric Acid SCHEMBL29688028 0.84 MEN1 (0.52) MEN1HTTKMT2ACA12CA2
SCHEMBL14236966 0.82 MEN1 (0.44) MEN1HTTKMT2ACA12CA2
SCHEMBL14315570 0.82 MEN1 (0.44) MEN1HTTKMT2ACA12CA2
SCHEMBL9365213 0.80 CA12 (0.46) MEN1HTTKMT2ACA12CA2
SCHEMBL7879117 0.79
SCHEMBL8277 0.79
SCHEMBL21208167 0.79 ALDH1A1 (0.67) MEN1HTTKMT2ACA12CA2
SCHEMBL22931682 0.79 MEN1 (0.52) MEN1HTTKMT2ACA12CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110590596-B Preparation method of 4,4' -diamino-2, 2' -dimethyl-1, 1' -biphenyl 常州市阳光药业有限公司 2022-03-22 CN claimed
US-RE38613-E1 Method for growing a nitride compound semiconductor SONY CORPORATION (JP) 2004-10-05 US claimed
US-6413312-B1 P-TYPE NITRIDE III-V, SUCH AS GALLIUM NITRIDE; METAL ORGANIC CHEMICAL VAPOR DEPOSITION USING AN ARYLALKYL HYDRAZINE NITROGEN SOURCE WHICH DOES NOT RELEASE HYDROGEN; HIGH CARRIER CONCENTRATION; NO ANNEALING; LIGHT EMITTING DIODES; LASERS SONY CORPORATION (JP) 2002-07-02 US claimed
US-6043140-A VAPOR DEPOSITION METHODS USING A NITROGEN SOURCE MATERIAL WHICH DOES NOT RELEASE HYDROGEN DURING RELEASE OF NITROGEN COMPRISING A SEC. OR TERT. AMINE, AN AZO COMPOUND, AN AZIDE OR AN ALKYL- AND PHENYL-SUBSTITUTED HYDRAZINE SONY CORPORATION (JP) 2000-03-28 US claimed
EP-0304239-A1 Reformed polysilazane and method of producing same TOA NENRYO KOGYO KABUSHIKI KAISHA (JP) 1989-02-22 EP disclosed
US-4775756-A 5-(4-amino-3,5-dimethoxyphenyl)-5-hydroxy-barbituric acid HOFFMANN-LA ROCHE INC. (US) 1988-10-04 US disclosed
US-4659818-A Intermediates for benzylpyrimidines HOFFMANN-LA ROCHE INC. (US) 1987-04-21 US disclosed
US-3987234-A ACRYLIC ESTER POLYMERS HENKEL & CIE G.M.B.H. (DT) 1976-10-19 US disclosed