SCHEMBL6891878

SCHEMBL6891878

CCCCCCc1ccc2cc3cc(CCCCCC)ccc3cc2c1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 3/20 0.53
ESR1 P03372 2/20 0.53
ADRA2A P08913 2/20 0.53
ADORA3 P0DMS8 2/20 0.53
TACR2 P21452 2/20 0.53
SLC6A2 P23975 2/20 0.53
SLC6A4 P31645 2/20 0.53
SLC6A3 Q01959 2/20 0.53
KDM4E B2RXH2 1/20 0.53
ALDH1A1 P00352 1/20 0.53
LMNA P02545 1/20 0.53
SHBG P04278 1/20 0.53
TP53 P04637 1/20 0.53
CYP3A4 P08684 1/20 0.53
HSPD1 P10809 1/20 0.53
ADRB3 P13945 1/20 0.53
HTR2C P28335 1/20 0.53
HSPE1 P61604 1/20 0.53
HIF1A Q16665 1/20 0.53
TST Q16762 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28162722 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3721561 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL29015687 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3724287 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3721391 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL28163200 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3724269 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3720679 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL21240657 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2
SCHEMBL3723631 1.00 PTGS2 (0.53) PTGS2ESR1ADRA2AADORA3TACR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100456518-C Organic thin film transistor and method for manufacturing the same 3M INNOVATIVE PROPERTIES CO (US) 2009-01-28 CN claimed
CN-1639884-A Organic thin film transistor with improved gate dielectric surface 3M INNOVATIVE PROPERTIES CO (US) 2005-07-13 CN claimed
EP-1481428-A1 ORGANIC THIN FILM TRANSISTOR WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M Innovative Properties Company (US) 2004-12-01 EP claimed
US-6768132-B2 MULTILAYER INTEGRATED CIRCUIT; BARRIER DIELECTRIC AND SEMICONDUCTOR 3M INNOVATIVE PROPERTIES COMPANY 2004-07-27 US claimed
US-20030175551-A1 Surface modified organic thin film transistors 3M INNOVATIVE PROPERTIES COMPANY 2003-09-18 US claimed
WO-2003077327-A1 ORGANIC THIN FILM TRANSISTORS WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M INNOVATIVE PROPERTIES COMPANY (US) 2003-09-18 WO claimed
CN-100456518-C Organic thin film transistor and method for manufacturing the same 3M INNOVATIVE PROPERTIES CO (US) 2009-01-28 CN disclosed
CN-1639884-A Organic thin film transistor with improved gate dielectric surface 3M INNOVATIVE PROPERTIES CO (US) 2005-07-13 CN disclosed
US-6768132-B2 MULTILAYER INTEGRATED CIRCUIT; BARRIER DIELECTRIC AND SEMICONDUCTOR 3M INNOVATIVE PROPERTIES COMPANY 2004-07-27 US disclosed
US-20030175551-A1 Surface modified organic thin film transistors 3M INNOVATIVE PROPERTIES COMPANY 2003-09-18 US disclosed