⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1538602 | 0.89 | — | — | |
| SCHEMBL5667536 | 0.83 | — | — | |
| SCHEMBL5665996 | 0.81 | — | — | |
| SCHEMBL1538773 | 0.80 | — | — | |
| SCHEMBL677687 | 0.80 | — | — | |
| SCHEMBL17937455 | 0.80 | — | — | |
| SCHEMBL10464740 | 0.80 | — | — | |
| SCHEMBL1539007 | 0.79 | NR1H2 (0.30) | — | |
| SCHEMBL22319210 | 0.78 | — | — | |
| SCHEMBL9805313 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 87 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8039049-B2 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-10-18 | — | — | US | claimed |
| US-7405168-B2 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMITED (JP) | 2008-07-29 | — | — | US | claimed |
| US-20080076262-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2008-03-27 | — | — | US | claimed |
| US-7345000-B2 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2008-03-18 | — | — | US | claimed |
| WO-2007040856-A2 | PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| WO-2007040834-A2 | PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| WO-2007040816-A2 | TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| US-20070077781-A1 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMTED (JP) | 2007-04-05 | — | — | US | claimed |
| WO-2006091264-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2006-08-31 | — | — | WO | claimed |
| US-20050215072-A1 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2005-09-29 | — | — | US | claimed |
| US-12497698-B2 | Coatings formed from the deposition of plasma-activated adducts | SOUTHWEST RESEARCH INSTITUTE (US) | 2025-12-16 | — | — | US | disclosed |
| CN-119923443-A | Sealant composition | 美国陶氏有机硅公司 | 2025-05-02 | — | — | CN | disclosed |
| CN-119522255-A | Method of applying a sealant composition | 美国陶氏有机硅公司 | 2025-02-25 | — | — | CN | disclosed |
| CN-119487139-A | Method of applying a sealant composition | 美国陶氏有机硅公司 | 2025-02-18 | — | — | CN | disclosed |
| CN-119213059-A | Sealant composition | 美国陶氏有机硅公司 | 2024-12-27 | — | — | CN | disclosed |
| EP-0332371-B1 | Method for forming hollow, porous-surfaced elastomeric bodies | DOW CORNING WRIGHT CORP (US) | 1994-06-01 | — | — | EP | disclosed |
| US-4906423-A | Methods for forming porous-surfaced polymeric bodies | DOW CORNING WRIGHT (US) | 1990-03-06 | — | — | US | disclosed |
| US-4892544-A | Methods for forming hollow, porous-surfaced elastomeric bodies | DOW CORNING WRIGHT CORPORATION (US) | 1990-01-09 | — | — | US | disclosed |
| EP-0332371-A1 | Method for forming hollow, porous-surfaced elastomeric bodies | DOW CORNING WRIGHT CORPORATION (US) | 1989-09-13 | — | — | EP | disclosed |
| EP-0315814-A2 | Methods for forming porous-surfaced polymeric bodies | DOW CORNING CORPORATION (US) | 1989-05-17 | — | — | EP | disclosed |