SCHEMBL701264

SCHEMBL701264

CSCc1ccc(O)c2ccccc12

nearest known ligand 0.53

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 12/20 0.52
EP300 Q09472 4/20 0.42
KAT2B Q92831 3/20 0.42
KAT8 Q9H7Z6 3/20 0.42
HDAC3 O15379 1/20 0.42
NCOR2 Q9Y618 1/20 0.42
BRD4 O60885 1/20 0.41
LDHA P00338 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704071 0.78 CYP1A2 (0.54)
SCHEMBL3955098 0.77 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL29357437 0.76 IDO1 (0.65) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL4612497 0.76 IDO1 (0.65) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL1397170 0.76 IDO1 (0.65) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL112381 0.75 KDM4E (0.68) BRD4
SCHEMBL12687972 0.74 HSPA5 (0.54) IDO1
SCHEMBL3087747 0.72 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL3082795 0.72 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL16158957 0.72 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023157801-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2023-08-24 WO disclosed
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20170176878-A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE JSR CORPORATION (JP) 2017-06-22 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9259668-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-20140363773-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20090305161-A1 LIQUID IMMERSION LITHOGRAPHY JSR CORPORATION (JP) 2009-12-10 US disclosed
EP-2128706-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR Corporation (JP) 2009-12-02 EP disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
EP-1953595-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
US-7288359-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-10-30 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed