⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2108652 | 0.75 | — | — | |
| SCHEMBL35058 | 0.70 | — | — | |
| SCHEMBL6692296 | 0.67 | — | — | |
| SCHEMBL1268918 | 0.67 | — | — | |
| SCHEMBL1361040 | 0.64 | — | — | |
| SCHEMBL9064638 | 0.64 | — | — | |
| SCHEMBL19713197 | 0.64 | — | — | |
| Lithium Ion SCHEMBL6692293 | 0.64 | — | — | |
| SCHEMBL2671652 | 0.64 | — | — | |
| SCHEMBL1360397 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 110 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| US-12494362-B2 | Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer | TOKYO ELECTRON LIMITED (JP) | 2025-12-09 | — | — | US | claimed |
| US-20250112345-A1 | PROTECTION METHOD AND DEVICE FOR BATTERY COMPONENTS, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRICAL APPARATUS | CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED (CN) | 2025-04-03 | — | — | US | claimed |
| CN-119677583-A | Method for producing coated organic particles | 巴斯夫欧洲公司 | 2025-03-21 | — | — | CN | claimed |
| CN-119601527-A | Method and system for filling gaps | ASM IP私人控股有限公司 | 2025-03-11 | — | — | CN | claimed |
| EP-4518016-A1 | BATTERY COMPONENT PROTECTION METHOD AND DEVICE, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC APPARATUS | Contemporary Amperex Technology (Hong Kong) Limited (HK) | 2025-03-05 | — | — | EP | claimed |
| US-20250066905-A1 | METHODS AND SYSTEMS FOR FILLING A GAP | ASM IP HOLDING B.V. (NL) | 2025-02-27 | — | — | US | claimed |
| US-20250069883-A1 | SELECTIVE DEPOSITION OF OXIDE MATERIAL AND A DEPOSITION ASSEMBLY | ASM IP HOLDING B.V. (NL) | 2025-02-27 | — | — | US | claimed |
| CN-110838431-B | Method of manufacturing semiconductor device and semiconductor device manufactured using the same | 三星显示有限公司 | 2024-11-26 | — | — | CN | claimed |
| EP-4379946-A1 | PROTECTION METHOD AND DEVICE FOR SECONDARY BATTERY, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC DEVICE | Contemporary Amperex Technology Co., Limited (CN) | 2024-06-05 | — | — | EP | claimed |
| EP-4237373-A1 | MODIFIED CARBON-BASED MATERIALS | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (IL) | 2023-09-06 | — | — | EP | claimed |
| CN-116669432-A | Polyimide-inorganic oxide-based composite dielectric film, preparation method thereof and flexible thin film transistor | 北京大学深圳研究生院 | 2023-08-29 | — | — | CN | claimed |
| CN-116254598-A | Wafer-level epitaxial film and preparation method thereof | 西安交通大学 | 2023-06-13 | — | — | CN | claimed |
| US-11521850-B2 | Method for manufacturing semiconductor device and semiconductor device using the same | SAMSUNG DISPLAY CO., LTD. (KR) | 2022-12-06 | — | — | US | claimed |
| WO-2022203969-A1 | ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE FILMS FOR SEMICONDUCTOR DEVICES USING AN ALUMINUM ALKOXIDE OXIDIZER | TOKYO ELECTRON LIMITED (JP) | 2022-09-29 | — | — | WO | claimed |
| US-20220310385-A1 | ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE FILMS FOR SEMICONDUCTOR DEVICES USING AN ALUMINUM ALKOXIDE OXIDIZER | TOKYO ELECTRON LIMITED (JP) | 2022-09-29 | — | — | US | claimed |
| WO-2022091105-A1 | MODIFIED CARBON-BASED MATERIALS | YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (IL) | 2022-05-05 | — | — | WO | claimed |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20090001407-A1 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP | SHOWA DENKO K.K. (JP) | 2009-01-01 | — | — | US | disclosed |
| EP-0240952-A2 | A method for producing a flaky material | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1987-10-14 | — | — | EP | disclosed |