SCHEMBL701876

SCHEMBL701876

C[CH]OC(=O)C1(CCCC)CCCCC1

nearest known ligand 0.45

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.45
CYP4A11 Q02928 1/20 0.45
CETP P11597 7/20 0.42
CYP2C19 P33261 1/20 0.32
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28230674 0.87 CYP4F2 (0.45) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL28154962 0.85 CYP4F2 (0.44) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL5052685 0.82 CYP4F2 (0.50) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL23384 0.81 CYP4F2 (0.49) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL28199817 0.81 CYP4F2 (0.67) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL8408805 0.81 CYP4F2 (0.46) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL21399965 0.79 CYP4F2 (0.47) CYP4F2CYP4A11CETPMEN1KMT2A
SCHEMBL11088776 0.79 CYP4F2 (0.69) CYP4F2CYP4A11CETPMEN1KMT2A
SCHEMBL7059027 0.79 CYP4F2 (0.50) CYP4F2CYP4A11CETPCYP2C19MEN1
SCHEMBL28630718 0.78 CYP4F2 (0.46) CYP4F2CYP4A11CETPMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10928727-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing FUJIFILM CORPORATION (JP) 2021-02-23 US disclosed
US-10423068-B2 Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2019-09-24 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170174801-A1 NON-CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, NON-CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-20060147837-A1 Resist composition FUJI PHOTO FILM CO., LTD. 2006-07-06 US disclosed
US-6902862-B2 Resist composition FUJI PHOTO FILM CO., LTD. (JP) 2005-06-07 US disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6733951-B2 HIGH RESOLUTION IN PATTERN FORMATION BY IRRADIATION WITH ACITINIC RAY; FOR PRODUCTION OF LITHOGRAPHIC PRINTING PLATES AND SEMICONDUCTORS/INTEGRATED CIRCUITS FOR LIQUID CRYSTALS AND THERMAL HEADS FUJI PHOTO FILM CO., LTD. (JP) 2004-05-11 US disclosed
US-20040058272-A1 Resist composition FUJI PHOTO FILM CO., LTD. 2004-03-25 US disclosed
US-20040005513-A1 Resist composition FUJI PHOTO FILM CO., LTD. 2004-01-08 US disclosed
US-6605409-B2 Includes a compound that generates a specific sulfonimide compound by irradiation with an actinic ray or a radiation and (B) a resin having an acid decomposable group which increases solubility in an alkali developer; improved resolving power FUJI PHOTO FILM CO., LTD. (JP) 2003-08-12 US disclosed
US-20030075708-A1 Positive radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2003-04-24 US disclosed
US-20020006578-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-01-17 US disclosed
EP-1158363-A1 Positive resist composition and onium salts of saccharin derivatives FUJI PHOTO FILM CO., LTD. (JP) 2001-11-28 EP disclosed