Fluoride

Fluoride

SCHEMBL701966

F.[H]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL28209223 1.00
Fluoride SCHEMBL27546939 1.00
Methane SCHEMBL27676032 0.82
Fluoride SCHEMBL6443670 0.82
Fluoride SCHEMBL17600627 0.82
Fluoride SCHEMBL11205647 0.82
Fluoride SCHEMBL9318976 0.71
Fluoride SCHEMBL38465 0.71
Fluoride Ion F-18 SCHEMBL12714265 0.71
Fluoride SCHEMBL49263 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113877535-B Hydrogen fluoride adsorbent and preparation method and application thereof 江苏新泰材料科技有限公司 2024-03-22 CN claimed
CN-108376570-B FLiNaK molten salt, preparation method thereof, reactor and preparation device 中国科学院上海应用物理研究所 2019-12-10 CN claimed
CN-108376570-A A kind of FLiNaK fused salts and preparation method thereof, reactor and preparation facilities 中国科学院上海应用物理研究所 2018-08-07 CN claimed
US-6627001-B2 Method for cleaning a semiconductor wafer MACRONIX INTERNATIONAL CO., LTD. (TW) 2003-09-30 US claimed
US-20020166572-A1 Method for cleaning a semiconductor wafer MACRONIX INTERNATIONAL CO., LTD. (TW) 2002-11-14 US claimed
EP-1038311-A1 SYSTEM AND METHOD FOR ETCHING ORGANIC ANTI-REFLECTIVE COATING FROM A SUBSTRATE Applied Materials, Inc. (US) 2000-09-27 EP claimed
WO-1999030360-A1 SYSTEM AND METHOD FOR ETCHING ORGANIC ANTI-REFLECTIVE COATING FROM A SUBSTRATE APPLIED MATERIALS, INC. (US) 1999-06-17 WO claimed
CN-113877535-B Hydrogen fluoride adsorbent and preparation method and application thereof 江苏新泰材料科技有限公司 2024-03-22 CN disclosed
CN-108807223-B Substrate processing apparatus and substrate processing method 株式会社斯库林集团 2022-03-01 CN disclosed
CN-110416184-B Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2021-10-08 CN disclosed
CN-108336127-B Silicon carbide substrate, semiconductor device, and methods for manufacturing silicon carbide substrate and semiconductor device 住友电气工业株式会社 2021-09-24 CN disclosed
CN-106406021-B Protective film and photomask assembly including the same 三星电子株式会社 2021-09-14 CN disclosed
EP-2423356-B1 PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE AND PROCESS FOR PRODUCING EPITAXIAL WAFER SUMITOMO ELECTRIC INDUSTRIES (JP) 2020-10-07 EP disclosed
WO-1999030360-A1 SYSTEM AND METHOD FOR ETCHING ORGANIC ANTI-REFLECTIVE COATING FROM A SUBSTRATE APPLIED MATERIALS, INC. (US) 1999-06-17 WO disclosed
EP-0848088-A1 A method for treating a suface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film SHIN-ETSU HANDOTAI COMPANY LIMITED (JP) 1998-06-17 EP disclosed
EP-0810643-A2 Method for cleaning a porous surface of a semiconductor substrate CANON KABUSHIKI KAISHA (JP) 1997-12-03 EP disclosed
CN-1166693-A Cleaning methods of porous surface and semiconductor surface CANON KK (JP) 1997-12-03 CN disclosed
CN-1131817-A Method for forming multilevel interconnections in semiconductor device NEC CORP (JP) 1996-09-25 CN disclosed
WO-1989002416-A1 INTEGRATED COAL CLEANING PROCESS WITH MIXED ACID REGENERATION WILLIAMS TECHNOLOGIES, INC. (US) 1989-03-23 WO disclosed
US-4695290-A Integrated coal cleaning process with mixed acid regeneration INTEGRATED CARBONS CORPORATION (US) 1987-09-22 US disclosed