⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL1633223 | 0.82 | — | — | |
| Fluoride SCHEMBL3098074 | 0.82 | — | — | |
| Fluoride SCHEMBL27273 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL11898253 | 0.82 | — | — | |
| Fluoride SCHEMBL701966 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL3432542 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL3503379 | 0.82 | — | — | |
| Fluoride SCHEMBL947078 | 0.82 | — | — | |
| Fluoride SCHEMBL155068 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL2794579 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6613687-B2 | Reverse reactive ion patterning of metal oxide films | LEXMARK INTERNATIONAL, INC. | 2003-09-02 | — | — | US | claimed |
| US-20020142609-A1 | Reverse reactive ion patterning of metal oxide films | FUNAI ELECTRIC CO., LTD (JP) | 2002-10-03 | — | — | US | claimed |
| US-6436740-B1 | Tri-layer process for forming TFT matrix of LCD with reduced masking steps | HANNSTAR DISPLAY CORP. (TW) | 2002-08-20 | — | — | US | claimed |
| US-6387740-B1 | Tri-layer process for forming TFT matrix of LCD with reduced masking steps | HANNSTAR DISPLAY CORP. (TW) | 2002-05-14 | — | — | US | claimed |
| US-6924206-B2 | Method of manufacturing a semiconductor capacitive element in a semiconductor device | NEC ELECTRONICS CORPORATION (JP) | 2005-08-02 | — | — | US | disclosed |
| US-6849920-B2 | Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same | NEC ELECTRONICS CORPORATION (JP) | 2005-02-01 | — | — | US | disclosed |
| US-20040262770-A1 | Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same | NEC ELECTRONICS CORP. (JP) | 2004-12-30 | — | — | US | disclosed |
| CN-1127135-C | Method for manufacturing horizontal trench capacitor and dynamic random access memory cell array | WORLD ADVANCED INTEGRATED CIRCUIT CO LTD (CN) | 2003-11-05 | — | — | CN | disclosed |
| US-20030201484-A1 | Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same | NEC ELECTRONICS CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-6613687-B2 | Reverse reactive ion patterning of metal oxide films | LEXMARK INTERNATIONAL, INC. | 2003-09-02 | — | — | US | disclosed |
| US-20020142609-A1 | Reverse reactive ion patterning of metal oxide films | FUNAI ELECTRIC CO., LTD (JP) | 2002-10-03 | — | — | US | disclosed |
| US-6436740-B1 | Tri-layer process for forming TFT matrix of LCD with reduced masking steps | HANNSTAR DISPLAY CORP. (TW) | 2002-08-20 | — | — | US | disclosed |
| US-4688069-A | Isolation for high density integrated circuits | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1987-08-18 | — | — | US | disclosed |
| US-4661832-A | Total dielectric isolation for integrated circuits | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1987-04-28 | — | — | US | disclosed |
| US-4502913-A | Total dielectric isolation for integrated circuits | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1985-03-05 | — | — | US | disclosed |
| US-4454647-A | Isolation for high density integrated circuits | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1984-06-19 | — | — | US | disclosed |
| US-4454646-A | Isolation for high density integrated circuits | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1984-06-19 | — | — | US | disclosed |
| EP-0104079-A2 | Integrated circuit contact structure | International Business Machines Corporation (US) | 1984-03-28 | — | — | EP | disclosed |
| EP-0073370-A2 | Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits | International Business Machines Corporation (US) | 1983-03-09 | — | — | EP | disclosed |
| EP-0072966-A2 | Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits | International Business Machines Corporation (US) | 1983-03-02 | — | — | EP | disclosed |