SCHEMBL702255

SCHEMBL702255

CC(=O)OCC(C[SiH2]c1ccc([SiH2]CC(COC(C)=O)OC(C)=O)cc1)OC(C)=O

nearest known ligand 0.46

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
AR P10275 1/20 0.46
TDP1 Q9NUW8 1/20 0.40
GAA P10253 2/20 0.36
ABCB1 P08183 1/20 0.35
PRKCA P17252 3/20 0.35
POLB P06746 2/20 0.34
MAPK1 P28482 1/20 0.34
ALDH1A1 P00352 3/20 0.33
MMP12 P39900 1/20 0.33
PTPN1 P18031 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703649 0.84 AR (0.36) ARTDP1GAAMAPK1ALDH1A1
SCHEMBL704987 0.77 TDP1 (0.46) ARTDP1GAAPRKCAALDH1A1
SCHEMBL703611 0.77 TSHR (0.34) ARTDP1ALDH1A1MMP12MAPT
Triacetin SCHEMBL821340 0.75 TDP1 (0.56) ARTDP1GAAPRKCAALDH1A1
Triacetin SCHEMBL3870 0.75 TDP1 (0.56) ARTDP1GAAPRKCAALDH1A1
SCHEMBL705615 0.75 TDP1 (0.44) ARTDP1GAAPRKCAALDH1A1
Triacetin SCHEMBL8954226 0.74 TDP1 (0.50) ARTDP1GAAPRKCAALDH1A1
SCHEMBL706747 0.74 TDP1 (0.43) ARTDP1GAAPRKCAALDH1A1
SCHEMBL704161 0.74 TDP1 (0.43) ARTDP1GAAPRKCAALDH1A1
Triacetin SCHEMBL16446056 0.73 TDP1 (0.54) ARTDP1GAAPRKCAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed