SCHEMBL704987

SCHEMBL704987

CC(=O)OCC(C[SiH2]CC[SiH2]CC(COC(C)=O)OC(C)=O)OC(C)=O

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.46
PRKCA P17252 4/20 0.39
AR P10275 1/20 0.38
GAA P10253 2/20 0.37
LMNA P02545 2/20 0.34
TSHR P16473 2/20 0.34
ALDH1A1 P00352 1/20 0.34
HSD17B10 Q99714 1/20 0.34
MEN1 O00255 1/20 0.34
CYP1A2 P05177 1/20 0.34
HRH1 P35367 1/20 0.34
KMT2A Q03164 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706747 0.92 TDP1 (0.43) TDP1PRKCAARGAALMNA
SCHEMBL704161 0.92 TDP1 (0.43) TDP1PRKCAARGAALMNA
SCHEMBL705615 0.90 TDP1 (0.44) TDP1PRKCAARGAALMNA
Triacetin SCHEMBL3870 0.83 TDP1 (0.56) TDP1PRKCAARGAALMNA
Triacetin SCHEMBL821340 0.83 TDP1 (0.56) TDP1PRKCAARGAALMNA
SCHEMBL707214 0.81 ALOX15 (0.39) TDP1PRKCAGAALMNATSHR
Triacetin SCHEMBL16446056 0.81 TDP1 (0.54) TDP1PRKCAARGAALMNA
Triacetin SCHEMBL16445622 0.81 TDP1 (0.54) TDP1PRKCAARGAALMNA
Triacetin SCHEMBL8012678 0.81 TDP1 (0.54) TDP1PRKCAARGAALMNA
Triacetin SCHEMBL4367394 0.81 TDP1 (0.54) TDP1PRKCAARGAALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed