Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CNR1 | P21554 | 4/20 | 0.44 |
| ▸ | CNR2 | P34972 | 4/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 6/20 | 0.43 |
| ▸ | MEN1 | O00255 | 5/20 | 0.43 |
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | IDO1 | P14902 | 1/20 | 0.37 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | HTR1B | P28222 | 2/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | HTR1D | P28221 | 1/20 | 0.35 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | SLC2A1 | P11166 | 1/20 | 0.35 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.35 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.35 |
| ▸ | ATG4B | Q9Y4P1 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31040506 | 1.00 | CNR1 (0.44) | CNR1CNR2KMT2AMEN1TSHR | |
| SCHEMBL106524 | 0.93 | CNR1 (0.45) | CNR1CNR2KMT2AMEN1IDO1 | |
| SCHEMBL29429149 | 0.93 | CNR1 (0.45) | CNR1CNR2KMT2AMEN1IDO1 | |
| Bromide SCHEMBL2194103 | 0.91 | CNR1 (0.44) | CNR1CNR2KMT2AMEN1IDO1 | |
| Hydrochloric Acid SCHEMBL31108778 | 0.91 | CNR1 (0.44) | CNR1CNR2KMT2AMEN1IDO1 | |
| SCHEMBL8737935 | 0.90 | CNR1 (0.47) | CNR1CNR2KMT2AMEN1CYP2C9 | |
| SCHEMBL2742104 | 0.90 | CNR1 (0.47) | CNR1CNR2KMT2AMEN1CYP2C9 | |
| SCHEMBL8736285 | 0.90 | CNR1 (0.47) | CNR1CNR2KMT2AMEN1CYP2C9 | |
| SCHEMBL3454520 | 0.89 | CNR2 (0.42) | CNR1CNR2KMT2AMEN1TSHR | |
| SCHEMBL3880273 | 0.88 | IDO1 (0.37) | CNR1CNR2KMT2AMEN1IDO1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023157801-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR株式会社 | 2023-08-24 | — | — | WO | disclosed |
| US-10423083-B2 | Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate | JSR CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| EP-2325695-B1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2017-12-20 | — | — | EP | disclosed |
| EP-2325694-B1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORP (JP) | 2017-11-08 | — | — | EP | disclosed |
| US-20170176878-A1 | CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE | JSR CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9459532-B2 | Radiation-sensitive resin composition, polymer and compound | JSR CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20160109803-A1 | PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-21 | — | — | US | disclosed |
| US-9259668-B2 | Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate | JSR CORPORATION (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9188858-B2 | Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound | JSR CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9152044-B2 | — | — | 2015-10-06 | — | — | US | disclosed |
| US-20100285405-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100248167-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100239981-A1 | POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100221664-A1 | RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2010-09-02 | — | — | US | disclosed |
| US-20100203452-A1 | RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100190104-A1 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD | JSR CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20090305161-A1 | LIQUID IMMERSION LITHOGRAPHY | JSR CORPORATION (JP) | 2009-12-10 | — | — | US | disclosed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-1953595-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |