SCHEMBL702863

SCHEMBL702863

CCCC(CCC)C(=O)O[SiH2]CCCC[SiH2]OC(=O)C(CCC)CCC

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC1 Q13547 3/20 0.43
HDAC2 Q92769 3/20 0.43
CHRM1 P11229 2/20 0.43
CHRM3 P20309 2/20 0.43
ADRA1A P35348 2/20 0.43
TDP1 Q9NUW8 2/20 0.43
AKR1A1 P14550 1/20 0.43
HTR2A P28223 1/20 0.43
HTR2C P28335 1/20 0.43
HRH1 P35367 1/20 0.43
DRD3 P35462 1/20 0.43
SLC6A3 Q01959 1/20 0.43
CYP3A4 P08684 3/20 0.41
TSHR P16473 3/20 0.41
NFKB1 P19838 2/20 0.41
NPSR1 Q6W5P4 2/20 0.41
HDAC7 Q8WUI4 3/20 0.40
HDAC8 Q9BY41 3/20 0.40
HDAC6 Q9UBN7 3/20 0.40
HDAC9 Q9UKV0 3/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704952 0.96 HDAC1 (0.43) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL706149 0.92 CA2 (0.48) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL704138 0.91 HDAC1 (0.46) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL704796 0.88 CA2 (0.48) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL707670 0.86 CA2 (0.50) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL706825 0.85 CA2 (0.39) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL707206 0.85 HDAC1 (0.44) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL705770 0.81 CA2 (0.39) HDAC1HDAC2CHRM1CHRM3ADRA1A
SCHEMBL703865 0.78 CA2 (0.50) TDP1CYP3A4TSHRNPSR1CA2
SCHEMBL7057742 0.76 MAPT (0.41) MAPK1ZDHHC7ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed