SCHEMBL702940

SCHEMBL702940

CCCC[SiH](CCCC)CCC[SiH](CCCC)CCCC

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.43
LMNA P02545 3/20 0.43
ALDH1A1 P00352 4/20 0.41
THRB P10828 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.39
HSD17B10 Q99714 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
TDP1 Q9NUW8 1/20 0.33
SLC22A1 O15245 3/20 0.32
SLC22A2 O15244 1/20 0.32
DNM1 Q05193 4/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL153638 0.96 TSHR (0.46) TSHRLMNAALDH1A1THRBSMN1; SMN2
Fluoride SCHEMBL27639893 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL28217587 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL10423271 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
Hydrochloric Acid SCHEMBL2140790 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL706848 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
Bromide SCHEMBL31547794 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL704491 0.92 TSHR (0.43) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL16497147 0.89 TSHR (0.47) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL15533414 0.89 TSHR (0.40) TSHRLMNAALDH1A1THRBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed