SCHEMBL703156

SCHEMBL703156

F[Si](F)(c1ccccc1)c1ccc([Si](F)(F)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
ALDH1A1 P00352 5/20 0.38
TSHR P16473 3/20 0.38
NR1H2 P55055 2/20 0.37
NR1H3 Q13133 2/20 0.37
NFE2L2 Q16236 1/20 0.32
KIF11 P52732 1/20 0.32
LMNA P02545 3/20 0.32
TDP1 Q9NUW8 3/20 0.32
CYP1A2 P05177 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2D6 P10635 1/20 0.32
CYP2C9 P11712 1/20 0.32
IDO1 P14902 1/20 0.32
CYP2C19 P33261 1/20 0.32
PTGS2 P35354 1/20 0.32
NPC1 O15118 1/20 0.32
MAPK1 P28482 1/20 0.32
RAB9A P51151 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704195 0.97 ESR1 (0.36) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL705989 0.80 ESR1 (0.40) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL49748 0.76 ESR1 (0.36) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL701465 0.76 ESR1 (0.36) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL15975758 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL103830 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL15975757 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL12879524 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL126319 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TSHRNR1H2
SCHEMBL1538906 0.71 TSHR (0.35) ESR1ESR2ALDH1A1TSHRNR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed