⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1270675 | 0.89 | — | — | |
| SCHEMBL1271199 | 0.89 | — | — | |
| SCHEMBL702535 | 0.88 | — | — | |
| SCHEMBL1595548 | 0.88 | — | — | |
| SCHEMBL704451 | 0.88 | — | — | |
| SCHEMBL12898541 | 0.87 | — | — | |
| SCHEMBL1270665 | 0.87 | — | — | |
| SCHEMBL103891 | 0.86 | — | — | |
| SCHEMBL3243281 | 0.85 | — | — | |
| SCHEMBL3239917 | 0.85 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9181356-B2 | Hydrogenation catalyst composition and hydrogenation method thereof | TSRC CORPORATION (TW) | 2015-11-10 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20110105694-A1 | HYDROGENATION CATALYST COMPOSITION AND HYDROGENATION METHOD THEREOF | TSRC CORPORATION (TW) | 2011-05-05 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| EP-2264219-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF | JSR Corporation (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| EP-2163664-A1 | Method for depositing si-containing film, insulator film, and semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-03-17 | — | — | EP | disclosed |
| US-7678299-B2 | Stock solution for production of nonlinear-optical materials, nonlinear-optical material, and nonlinear-optical device | FUJI XEROX CO., LTD. (JP) | 2010-03-16 | — | — | US | disclosed |
| US-20100061915-A1 | METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |