SCHEMBL703256

SCHEMBL703256

c1ccc(C(CO[SiH2]CCCC[SiH2]OCC(c2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.40
CA1 P00915 2/20 0.40
CA2 P00918 2/20 0.40
CA9 Q16790 2/20 0.40
HTR2A P28223 8/20 0.38
TAAR1 Q96RJ0 1/20 0.38
HRH1 P35367 7/20 0.38
CA7 P43166 1/20 0.35
GRIN1 Q05586 2/20 0.34
GRIN2A Q12879 2/20 0.34
SCN4A P35499 2/20 0.34
TDP1 Q9NUW8 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
PKM P14618 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
SIGMAR1 Q99720 1/20 0.32
CHRNB2 P17787 1/20 0.32
CHRNA4 P43681 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704183 0.96 CA12 (0.40) CA12CA1CA2CA9HTR2A
SCHEMBL704842 0.91 CA12 (0.42) CA12CA1CA2CA9HTR2A
SCHEMBL10612629 0.90 HTR2A (0.52) CA12CA1CA2CA9HTR2A
SCHEMBL3481757 0.89 HTR2A (0.38) CA12CA1CA2CA9HTR2A
SCHEMBL3482136 0.84 TDP1 (0.39) CA12CA1CA2CA9HTR2A
SCHEMBL705912 0.83 CA12 (0.42) CA12CA1CA2CA9HTR2A
SCHEMBL704101 0.80 HRH1 (0.44) HTR2ATAAR1HRH1CYP1A2CYP2D6
SCHEMBL4082793 0.79 CA12 (0.40) CA12CA1CA2CA9HTR2A
SCHEMBL4268026 0.79 CA12 (0.40) CA12CA1CA2CA9HTR2A
SCHEMBL4078051 0.79 CA12 (0.40) CA12CA1CA2CA9HTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed