SCHEMBL3482136

SCHEMBL3482136

CCC[SiH2]OCC(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.39
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
HTR2A P28223 4/20 0.36
HRH1 P35367 4/20 0.36
LMNA P02545 1/20 0.36
AOC3 Q16853 2/20 0.36
TAAR1 Q96RJ0 2/20 0.35
HTT P42858 2/20 0.35
MEN1 O00255 1/20 0.34
ALDH1A1 P00352 1/20 0.34
CYP3A4 P08684 1/20 0.34
ALOX15 P16050 1/20 0.34
ALOX12 P18054 1/20 0.34
KMT2A Q03164 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
GPR55 Q9Y2T6 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481757 0.89 HTR2A (0.38) CA12CA1CA2CA9HTR2A
SCHEMBL704842 0.88 CA12 (0.42) TDP1CA12CA1CA2CA9
SCHEMBL4268026 0.84 CA12 (0.40) TDP1CA12CA1CA2CA9
SCHEMBL703256 0.84 CA12 (0.40) TDP1CA12CA1CA2CA9
SCHEMBL704183 0.84 CA12 (0.40) TDP1CA12CA1CA2CA9
SCHEMBL3481513 0.81 HRH1 (0.40) TDP1HTR2AHRH1LMNAAOC3
SCHEMBL705912 0.79 CA12 (0.42) TDP1CA12CA1CA2CA9
SCHEMBL10612629 0.79 HTR2A (0.52) CA12CA1CA2CA9HTR2A
SCHEMBL28653063 0.77 LMNA (0.34) LMNA
SCHEMBL4078051 0.76 CA12 (0.40) TDP1CA12CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed