SCHEMBL703355

SCHEMBL703355

CCCC[Si](F)(F)CCC[Si](F)(F)CCCC

nearest known ligand 0.38

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.38
LMNA P02545 1/20 0.38
THRB P10828 1/20 0.35
ALDH1A1 P00352 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707899 0.97 TSHR (0.40) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL704729 0.93 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL702956 0.93 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL15091700 0.90 TSHR (0.41) TSHRLMNATHRBALDH1A1
SCHEMBL15091959 0.88 TSHR (0.33) TSHRLMNATHRB
SCHEMBL15091656 0.88 TSHR (0.33) TSHRLMNATHRB
SCHEMBL707218 0.87
SCHEMBL15091983 0.87 TSHR (0.44) TSHRLMNATHRBALDH1A1
SCHEMBL15302621 0.87 TSHR (0.44) TSHRLMNATHRBALDH1A1
SCHEMBL15091980 0.85 TSHR (0.32) TSHRLMNATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed