SCHEMBL707899

SCHEMBL707899

CCCC[Si](F)(F)CCCC

nearest known ligand 0.40

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.40
LMNA P02545 1/20 0.40
THRB P10828 1/20 0.38
ALDH1A1 P00352 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
SLC22A1 O15245 2/20 0.30
SLC22A2 O15244 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703355 0.97 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL702956 0.97 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL704729 0.97 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL15091700 0.94 TSHR (0.41) TSHRLMNATHRBALDH1A1SLC22A1
SCHEMBL15091959 0.91 TSHR (0.33) TSHRLMNATHRB
SCHEMBL15091656 0.91 TSHR (0.33) TSHRLMNATHRB
SCHEMBL15302621 0.90 TSHR (0.44) TSHRLMNATHRBALDH1A1SLC22A1
SCHEMBL15091983 0.90 TSHR (0.44) TSHRLMNATHRBALDH1A1SLC22A1
SCHEMBL15091980 0.88 TSHR (0.32) TSHRLMNATHRB
SCHEMBL15091690 0.88 TSHR (0.37) TSHRLMNATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO claimed
EP-2011834-B1 CURABLE COMPOSITION KANEKA CORP (JP) 2012-07-25 EP claimed
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO disclosed
CN-108375878-B Polymerizable composition, method for producing cured film, and cured film 东京应化工业株式会社 2023-12-08 CN disclosed
US-11718717-B2 Resin composition, method for producing resin composition, film formation method, and cured product TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-08 US disclosed
CN-107428891-B Curable composition 施敏打硬株式会社 2021-04-20 CN disclosed
US-20200392292-A1 RESIN COMPOSITION, METHOD FOR PRODUCING RESIN COMPOSITION, FILM FORMATION METHOD, AND CURED PRODUCT TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-17 US disclosed
CN-105392845-B Photocurable composition 思美定株式会社 2020-10-20 CN disclosed
US-10767017-B2 Resin composition, method for producing resin composition, film formation method, and cured product TOKYO OHKA KOGYO CO., LTD. (JP) 2020-09-08 US disclosed
EP-3081612-B1 PHOTOCURABLE COMPOSITION HAVING ADHESIVE PROPERTIES CEMEDINE CO LTD (JP) 2018-11-14 EP disclosed
US-20180179338-A1 RESIN COMPOSITION, METHOD FOR PRODUCING RESIN COMPOSITION, FILM FORMATION METHOD, AND CURED PRODUCT TOKYO OHKA KOGYO CO., LTD. (JP) 2018-06-28 US disclosed
EP-2011834-B1 CURABLE COMPOSITION KANEKA CORP (JP) 2012-07-25 EP disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-7772332-B2 organotin-free catalyst; fluorosilane catalyst and an amine or aminoalkylsiloxane coupler used together for high curing of a polymer with a reactive silicon group; polymer is hydrosilylated polyether, polyisobutylene, or polyacrylate; sealant, adhesive; oil resistance; elasticity KANEKA CORPORATION (JP) 2010-08-10 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090069505-A1 CURABLE COMPOSITION KANEKA CORPORATION (JP) 2009-03-12 US disclosed
EP-2011834-A1 CURABLE COMPOSITION Kaneka Corporation (JP) 2009-01-07 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-3962299-A Organopolysiloxane polyesters CELANESE CORPORATION (US) 1976-06-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200392292-A1 RESIN COMPOSITION, METHOD FOR PRODUCING RESIN COMPOSITION, FILM FORMATION METHOD, AND CURED PRODUCT SEM1, RER1, SMCHD1 TSHR 4195/4885LMNA 1439/4885THRB 3175/4885
US-11718717-B2 Resin composition, method for producing resin composition, film formation method, and cured product SEM1, RER1, SMCHD1 TSHR 4195/4885LMNA 1439/4885THRB 3175/4885
US-10767017-B2 Resin composition, method for producing resin composition, film formation method, and cured product SEM1, RER1, FDFT1 TSHR 3941/4885LMNA 1239/4885THRB 2846/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.