SCHEMBL703679

SCHEMBL703679

CCCCC(CCCC)(CCCC)CCO[SiH3]

nearest known ligand 0.31

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31
ADRB3 P13945 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482720 0.95 CYP3A4 (0.30)
SCHEMBL3482342 0.95 CYP3A4 (0.30)
SCHEMBL15847383 0.95 TSHR (0.33) ADRB2ADRB1ADRB3
SCHEMBL15847148 0.93 TSHR (0.38)
SCHEMBL15847574 0.93 TSHR (0.38)
SCHEMBL15847524 0.93 TSHR (0.38)
SCHEMBL2494556 0.93 TSHR (0.38)
SCHEMBL3482251 0.91
SCHEMBL3481421 0.91
SCHEMBL702932 0.90 ADRB2 (0.31) ADRB2ADRB1ADRB3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO claimed
US-20150329727-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2015-11-19 US claimed
EP-2938753-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF Akzo Nobel Coatings International B.V. (NL) 2015-11-04 EP claimed
WO-2014102166-A9 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2014-09-18 WO claimed
WO-2014102166-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2014-07-03 WO claimed
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO disclosed
EP-2154710-B1 Substrate joining method and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2016-11-16 EP disclosed
US-20150329727-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2015-11-19 US disclosed
EP-2938753-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF Akzo Nobel Coatings International B.V. (NL) 2015-11-04 EP disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
WO-2014102166-A9 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2014-09-18 WO disclosed
WO-2014102166-A1 A COATING COMPOSITION, A PREPARATION METHOD THEREFORE, AND USE THEREOF AKZO NOBEL COATINGS INTERNATIONAL B.V. (NL) 2014-07-03 WO disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-2116563-A1 CATALYST FOR DEALCOHOLIZATION CONDENSATION REACTION AND METHOD FOR PRODUCING ORGANOPOLYSILOXANE USING THE SAME Dow Corning Toray Co., Ltd. (JP) 2009-11-11 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-0310320-B1 Curable composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1994-12-28 EP disclosed
US-4923948-A Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1990-05-08 US disclosed
EP-0310320-A2 Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1989-04-05 EP disclosed