SCHEMBL704023

SCHEMBL704023

CCOC(OCC)[SiH2]CCCC[SiH2]C(OCC)OCC

nearest known ligand 0.38

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.38
LMNA P02545 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3104636 0.97 THRB (0.36) THRBLMNA
SCHEMBL6007776 0.97 THRB (0.36) THRBLMNA
SCHEMBL478006 0.97 THRB (0.36) THRBLMNA
SCHEMBL646412 0.94 THRB (0.38) THRBLMNA
SCHEMBL17750077 0.91 THRB (0.36) THRBLMNA
SCHEMBL6049083 0.91 THRB (0.36) THRBLMNA
SCHEMBL17750052 0.91 THRB (0.36) THRBLMNA
SCHEMBL6889420 0.91 THRB (0.36) THRBLMNA
SCHEMBL2196080 0.91 THRB (0.36) THRBLMNA
SCHEMBL27874513 0.91 THRB (0.36) THRBLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024150783-A1 ADHESIVE COMPOSITION, ADHESIVE LAYER, OPTICAL FILM WITH ADHESIVE LAYER, AND DISPLAY DEVICE 住友化学株式会社 2024-07-18 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed