⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL705843 | 0.92 | — | — | |
| SCHEMBL58489 | 0.89 | TSHR (0.44) | — | |
| SCHEMBL502450 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL3767966 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL23701168 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL3773266 | 0.85 | — | — | |
| SCHEMBL7846376 | 0.84 | TSHR (0.43) | — | |
| SCHEMBL707727 | 0.82 | — | — | |
| SCHEMBL10843306 | 0.79 | TSHR (0.50) | — | |
| SCHEMBL23700975 | 0.78 | TSHR (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240384120-A1 | FREE-RADICALLY POLYMERIZABLE MONOMER, FREE-RADICALLY POLYMERIZABLE COMPOSITION, METHOD OF USING THE SAME, POLYMERIZED COMPOSITION, AND ELECTRONIC ARTICLE | 3M INNOVATIVE PROPERTIES COMPANY | 2024-11-21 | — | — | US | disclosed |
| CN-117677626-A | Free radically polymerizable monomers, free radically polymerizable compositions, methods of use, polymerized compositions, and electronic articles | 3M创新有限公司 | 2024-03-08 | — | — | CN | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |