SCHEMBL704477

SCHEMBL704477

O=C(O[SiH2]c1ccc([SiH2]OC(=O)C(c2ccccc2)c2ccccc2)cc1)C(c1ccccc1)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.50
TDP1 Q9NUW8 1/20 0.48
CHRM1 P11229 6/20 0.45
CHRM3 P20309 6/20 0.45
CHRM2 P08172 5/20 0.45
CHRM4 P08173 5/20 0.45
KLK7 P49862 3/20 0.44
LMNA P02545 3/20 0.42
CYP2D6 P10635 3/20 0.42
CYP1A2 P05177 2/20 0.42
HDAC3 O15379 1/20 0.42
HDAC4 P56524 1/20 0.42
HDAC1 Q13547 1/20 0.42
HDAC7 Q8WUI4 1/20 0.42
HDAC2 Q92769 1/20 0.42
HDAC10 Q969S8 1/20 0.42
HDAC11 Q96DB2 1/20 0.42
HDAC8 Q9BY41 1/20 0.42
HDAC6 Q9UBN7 1/20 0.42
HDAC9 Q9UKV0 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15543375 0.78 L3MBTL1 (0.51) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL702609 0.77 CHRM1 (0.49) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL706300 0.77 CHRM1 (0.49) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL751720 0.75 L3MBTL1 (0.56) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL329046 0.74 L3MBTL1 (0.60) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL29209420 0.74 L3MBTL1 (0.60) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL1053847 0.74 ELANE (0.43) L3MBTL1TDP1LMNACYP1A2ALDH1A1
SCHEMBL15848174 0.74 L3MBTL1 (0.46) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL704042 0.74 CHRM1 (0.46) L3MBTL1TDP1CHRM1CHRM3CHRM2
SCHEMBL708242 0.74 CHRM1 (0.46) L3MBTL1TDP1CHRM1CHRM3CHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed