⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13089350 | 0.87 | — | — | |
| SCHEMBL10308292 | 0.83 | — | — | |
| SCHEMBL329934 | 0.77 | — | — | |
| SCHEMBL707438 | 0.77 | — | — | |
| SCHEMBL27885175 | 0.74 | — | — | |
| SCHEMBL237321 | 0.72 | — | — | |
| SCHEMBL236009 | 0.72 | — | — | |
| SCHEMBL703482 | 0.72 | — | — | |
| SCHEMBL459259 | 0.72 | — | — | |
| SCHEMBL977707 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025049147-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-03-06 | — | — | WO | claimed |
| US-20250069884-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-27 | — | — | US | claimed |
| WO-2025034650-A1 | RF PULSING ASSISTED LOW-K DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | WO | claimed |
| US-20250054749-A1 | RF PULSING ASSISTED LOW-K FILM DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | US | claimed |
| WO-2025049147-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-03-06 | — | — | WO | disclosed |
| US-20250069884-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-27 | — | — | US | disclosed |
| US-20250054749-A1 | RF PULSING ASSISTED LOW-K FILM DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | US | disclosed |
| WO-2025034650-A1 | RF PULSING ASSISTED LOW-K DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | WO | disclosed |
| US-10234762-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2019-03-19 | — | — | US | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20170003592-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-01-05 | — | — | US | disclosed |
| JP-2006111738-A | COMPOSITION FOR SURFACE HYDROPHOBIZING, SURFACE HYDROPHOBIZING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD | JSR CORP | 2006-04-27 | — | — | JP | disclosed |
| EP-1564269-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-17 | — | — | EP | disclosed |
| US-6930393-B2 | hydrolyzable silicon compound or at least one product resulting from at least partial hydrolysis condensation of the silicon compound | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2005-08-16 | — | — | US | disclosed |
| US-20040216641-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| US-20040201014-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-10-14 | — | — | US | disclosed |
| US-20040202874-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-10-14 | — | — | US | disclosed |
| CN-1536023-A | Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-10-13 | — | — | CN | disclosed |
| US-20040195660-A1 | Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-10-07 | — | — | US | disclosed |