SCHEMBL705044

SCHEMBL705044

c1ccc(C(O[SiH2]c2ccc([SiH2]OC(c3ccccc3)c3ccccc3)cc2)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 8/20 0.39
TDO2 P48775 8/20 0.39
SCN1A P35498 3/20 0.36
SCN2A Q99250 3/20 0.36
SCN3A Q9NY46 3/20 0.36
TSHR P16473 2/20 0.36
IDO2 Q6ZQW0 2/20 0.36
LMNA P02545 2/20 0.36
CYP1A2 P05177 1/20 0.36
CHRM2 P08172 1/20 0.36
CHRM4 P08173 1/20 0.36
CHRM5 P08912 1/20 0.36
ADRA2A P08913 1/20 0.36
CYP2D6 P10635 1/20 0.36
CHRM1 P11229 1/20 0.36
ADRA2B P18089 1/20 0.36
CHRM3 P20309 1/20 0.36
SLC6A2 P23975 1/20 0.36
HRH2 P25021 1/20 0.36
HTR2A P28223 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482509 0.84 TP53 (0.45) SCN1ASCN2ASCN3ATSHRLMNA
SCHEMBL8636463 0.83 IDO1 (0.38) IDO1TDO2SCN1ASCN2ASCN3A
SCHEMBL15066842 0.82 UGT2B7 (0.36) CYP1A2CYP2D6SLC6A2SLC6A4SLC6A3
SCHEMBL3481483 0.79 TACR1 (0.40) SCN1ASCN2ASCN3ATSHRLMNA
SCHEMBL3889071 0.75 IDO1 (0.43) IDO1TDO2IDO2HTR2ADPP4
SCHEMBL10438594 0.75 IDO1 (0.42) IDO1TDO2SCN1ASCN2ASCN3A
SCHEMBL10438591 0.75 IDO1 (0.39) IDO1TDO2SCN1ASCN2ASCN3A
SCHEMBL4122749 0.75 SCN1A (0.41) IDO1TDO2SCN1ASCN2ASCN3A
SCHEMBL708230 0.73 SCN1A (0.39) IDO1TDO2SCN1ASCN2ASCN3A
SCHEMBL704287 0.73 SCN1A (0.39) IDO1TDO2SCN1ASCN2ASCN3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed