SCHEMBL3481483

SCHEMBL3481483

Cc1cc(C)cc([SiH2]OC(c2ccccc2)c2ccccc2)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TACR1 P25103 12/20 0.40
CACNA1F O60840 1/20 0.36
CACNA1D Q01668 1/20 0.36
CACNA1S Q13698 1/20 0.36
CACNA1C Q13936 1/20 0.36
LMNA P02545 2/20 0.35
ACP3 P15309 1/20 0.35
SLC6A2 P23975 2/20 0.35
SLC6A4 P31645 2/20 0.35
SLC6A3 Q01959 2/20 0.35
SCN1A P35498 2/20 0.34
SCN2A Q99250 2/20 0.34
SCN3A Q9NY46 2/20 0.34
CYP1A2 P05177 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM4 P08173 1/20 0.34
CHRM5 P08912 1/20 0.34
ADRA2A P08913 1/20 0.34
CYP2D6 P10635 1/20 0.34
CHRM1 P11229 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482679 0.83 TACR1 (0.39) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL705044 0.79 IDO1 (0.39) LMNASLC6A2SLC6A4SLC6A3SCN1A
SCHEMBL3481761 0.79 TACR1 (0.40) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481898 0.77 TACR1 (0.44) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481891 0.76 TACR1 (0.42) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481721 0.74 IDO1 (0.42) TACR1ACP3SLC6A2SLC6A4SLC6A3
SCHEMBL3481727 0.74 TACR1 (0.39) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL8636463 0.73 IDO1 (0.38) LMNASLC6A2SLC6A4SLC6A3SCN1A
SCHEMBL15066842 0.72 UGT2B7 (0.36) SLC6A2SLC6A4SLC6A3CYP1A2CYP2D6
SCHEMBL3482509 0.70 TP53 (0.45) LMNASLC6A2SLC6A4SLC6A3SCN1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed