SCHEMBL705094

SCHEMBL705094

CCCC[Si](F)(CCCC)c1ccc([Si](F)(CCCC)CCCC)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 2/20 0.43
NR1H3 Q13133 2/20 0.43
AR P10275 1/20 0.41
CYP2D6 P10635 2/20 0.32
HTT P42858 2/20 0.32
TSHR P16473 1/20 0.32
CYP3A4 P08684 1/20 0.32
MEN1 O00255 1/20 0.32
TP53 P04637 1/20 0.32
CYP1A2 P05177 1/20 0.32
MAPT P10636 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
KMT2A Q03164 1/20 0.32
ESR1 P03372 2/20 0.31
ESR2 Q92731 1/20 0.31
KDM4E B2RXH2 1/20 0.31
NPC1 O15118 1/20 0.31
LMNA P02545 1/20 0.31
RAB9A P51151 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704107 0.89 TSHR (0.37) NR1H2NR1H3ARHTTTSHR
SCHEMBL715184 0.84 NR1H2 (0.42) NR1H2NR1H3ARESR1ESR2
SCHEMBL703037 0.80 NR1H2 (0.43) NR1H2NR1H3ARESR1ESR2
SCHEMBL706935 0.75 NR1H2 (0.43) NR1H2NR1H3ARESR1ESR2
SCHEMBL704972 0.73 TP53 (0.35) NR1H2NR1H3HTTTSHRTP53
SCHEMBL706457 0.73 ESR1 (0.40) NR1H2NR1H3ARESR1ESR2
SCHEMBL17124988 0.72 NR1H2 (0.63) NR1H2NR1H3ARESR1ESR2
SCHEMBL272894 0.70 AR (0.46) NR1H2NR1H3ARHTTTSHR
SCHEMBL272469 0.70 AR (0.46) NR1H2NR1H3ARHTTTSHR
SCHEMBL706381 0.70 NR1H2 (0.43) NR1H2NR1H3ARESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed