SCHEMBL704107

SCHEMBL704107

CCCC[Si](F)(CCCC)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.37
HTT P42858 1/20 0.37
NR1H2 P55055 1/20 0.36
NR1H3 Q13133 1/20 0.36
LTA4H P09960 2/20 0.35
PCSK9 Q8NBP7 1/20 0.35
PTGS2 P35354 1/20 0.34
NAAA Q02083 1/20 0.34
AR P10275 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
HSD11B1 P28845 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705094 0.89 NR1H2 (0.43) TSHRHTTNR1H2NR1H3AR
SCHEMBL704972 0.86 TP53 (0.35) TSHRHTTNR1H2NR1H3
SCHEMBL15302492 0.84 TSHR (0.31) TSHRHTTNR1H2NR1H3
SCHEMBL16061095 0.83 NR1H2 (0.40) TSHRHTTNR1H2NR1H3LTA4H
SCHEMBL707815 0.83 DNM1 (0.36) TSHRHTTNR1H2NR1H3LTA4H
SCHEMBL705289 0.78 TSHR (0.36) TSHRHTTNR1H2NR1H3LTA4H
SCHEMBL3886636 0.77 TSHR (0.38) TSHRHTTNR1H2NR1H3LTA4H
SCHEMBL27604670 0.77 TSHR (0.38) TSHRHTTLTA4HPCSK9PTGS2
SCHEMBL704994 0.77 TP53 (0.38) TSHRNR1H2NR1H3
SCHEMBL5801979 0.76 NR1H2 (0.53) TSHRNR1H2NR1H3LTA4HPCSK9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed