SCHEMBL705106

SCHEMBL705106

CC(C)[SiH2]OC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1123060 0.80
SCHEMBL2044088 0.78
SCHEMBL15090757 0.75
SCHEMBL11231412 0.73 ALDH1A1 (0.30)
Hydrochloric Acid SCHEMBL308639 0.71
SCHEMBL29201665 0.71
SCHEMBL23093307 0.69
SCHEMBL365877 0.69 ALDH1A1 (0.30)
SCHEMBL23093202 0.67
SCHEMBL14841059 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-101472959-A Ziegler-Natta catalyst with in situ-generated donor NOVOLEN TECH HOLDINGS CV (NL) 2009-07-01 CN disclosed
CN-100501532-C Liquid crystal directing agent, liquid crystal oriented film and liquid crystal display element JSR CORP (JP) 2009-06-17 CN disclosed
CN-100367472-C Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2008-02-06 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1664657-A Liquid crystal directing agent, liquid crystal oriented film and liquid crystal indicator element JSR CORP (JP) 2005-09-07 CN disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed