SCHEMBL705233

SCHEMBL705233

CCCC[Si](C)(CCCC)OC(C)C

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4274263 0.84
SCHEMBL14423295 0.80 LMNA (0.30) LMNA
SCHEMBL23093225 0.80 LMNA (0.30) LMNA
SCHEMBL105859 0.77 LMNA (0.31) LMNA
SCHEMBL108991 0.77 LMNA (0.33) LMNA
SCHEMBL704902 0.77 LMNA (0.31) LMNA
SCHEMBL706677 0.75 LMNA (0.30) LMNA
SCHEMBL704858 0.75 LMNA (0.30) LMNA
SCHEMBL705979 0.75 LMNA (0.30) LMNA
SCHEMBL704511 0.75 LMNA (0.30) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114556527-A Monoalkoxysilanes and dialkoxysilanes and dense organosilica films prepared therefrom 弗萨姆材料美国有限责任公司 2022-05-27 CN claimed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed