SCHEMBL705327

SCHEMBL705327

COC(C)(OC)[SiH2]CC[SiH2]C(C)(OC)OC

nearest known ligand 0.35

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.35
TSHR P16473 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704962 0.88 ALDH1A1 (0.32) ALDH1A1TSHRTDP1
SCHEMBL704278 0.88 ALDH1A1 (0.32) ALDH1A1TSHRTDP1
SCHEMBL4811221 0.83
SCHEMBL4539738 0.83
SCHEMBL21694378 0.81 ALDH1A1 (0.32) ALDH1A1TSHRTDP1
SCHEMBL1857156 0.81
SCHEMBL704423 0.80 ALDH1A1 (0.35) ALDH1A1TSHRTDP1
SCHEMBL11237052 0.79
SCHEMBL15049186 0.79
SCHEMBL21694375 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024150783-A1 ADHESIVE COMPOSITION, ADHESIVE LAYER, OPTICAL FILM WITH ADHESIVE LAYER, AND DISPLAY DEVICE 住友化学株式会社 2024-07-18 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-6805964-B2 CONTACTING AT LEAST ONE SIDE OF THE METAL FOIL WITH AN INERT SILANE, TITANATE OR ZIRCONATE COMPOUND TO FORM A PROTECTIVE FILM HAVING THICKNESS 0.001 TO 1 MICRON ON THE SURFACE OF THE METAL FOIL NIKKO MATERIALS USA, INC. 2004-10-19 US disclosed
US-20030178139-A1 Protective coatings for improved tarnish resistance in metal foils NIKKO MATERIALS USA, INC. 2003-09-25 US disclosed
US-6537675-B1 Protective film of at least one inert silane, titanate or zirconate overlying the first side of the metal foil; and a metal sheet having a first side and a second side, the first side overlying the protective film GA-TEK, INC. 2003-03-25 US disclosed