SCHEMBL7056987

SCHEMBL7056987

O=C(NC(=O)C1CCCCC1)C1CCCCC1

nearest known ligand 0.67

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
HDAC8 Q9BY41 1/20 0.67
HDAC6 Q9UBN7 1/20 0.67
CES2 O00748 1/20 0.55
CES1 P23141 1/20 0.55
EPHX1 P07099 1/20 0.54
ALDH1A1 P00352 3/20 0.50
TSHR P16473 3/20 0.50
MAPK1 P28482 1/20 0.50
HPGD P15428 2/20 0.48
POLB P06746 2/20 0.48
HSD11B1 P28845 1/20 0.48
MAPT P10636 1/20 0.48
HTT P42858 1/20 0.48
PTPN1 P18031 1/20 0.48
SMN1; SMN2 Q16637 1/20 0.46
HSD17B10 Q99714 1/20 0.46
RAB9A P51151 2/20 0.46
NPC1 O15118 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11291275 0.91 HDAC8 (0.55) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL19325393 0.87 HDAC8 (0.58) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL20565788 0.87 HDAC8 (0.58) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL917236 0.85 HDAC8 (0.56) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL20427412 0.85 HDAC8 (0.56) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL20787869 0.85 HDAC8 (0.56) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL8332232 0.85 HDAC8 (0.56) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL246975 0.84 POLB (0.48) HDAC8HDAC6EPHX1ALDH1A1HPGD
SCHEMBL12323193 0.82 HDAC8 (0.67) HDAC8HDAC6CES2CES1EPHX1
SCHEMBL23368629 0.81 HDAC8 (0.52) HDAC8HDAC6CES2CES1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9766545-B2 Methods for small trench patterning using chemical amplified photoresist compositions TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-09-19 US disclosed
US-20150331324-A1 Methods for Small Trench Patterning Using Chemical Amplified Photoresist Compositions TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-11-19 US disclosed
US-9093276-B2 Methods for small trench patterning using chemical amplified photoresist compositions TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-07-28 US disclosed
US-20140065552-A1 Methods For Small Trench Patterning Using Chemical Amplified Photoresist Compositions TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2014-03-06 US disclosed
US-8592137-B2 Methods for small trench patterning using chemical amplified photoresist compositions TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2013-11-26 US disclosed
US-20130155381-A1 METHODS FOR SMALL TRENCH PATTERNING USING CHEMICAL AMPLIFIED PHOTORESIST COMPOSITIONS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2013-06-20 US disclosed
EP-1117003-B1 Process of preparing a chemical amplification type resist composition SHINETSU CHEMICAL CO (JP) 2012-06-20 EP disclosed
EP-1399149-A2 TAXANE PRODRUGS Nobex Corporation (US) 2004-03-24 EP disclosed
US-6653044-B2 Addition copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-25 US disclosed
WO-2002072010-A2 TAXANE PRODRUGS NOBEX CORPORATION (US) 2002-09-19 WO disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed