SCHEMBL705806

SCHEMBL705806

CC(C)(C)C(C(=O)O[SiH3])c1ccccc1

nearest known ligand 0.67

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.67
ATM Q13315 1/20 0.67
KMT2A Q03164 1/20 0.44
CYP2D6 P10635 2/20 0.38
SRC P12931 1/20 0.38
CNR1 P21554 1/20 0.37
CNR2 P34972 1/20 0.37
CYP1A2 P05177 1/20 0.37
PKM P14618 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
CHRM2 P08172 2/20 0.37
CHRM4 P08173 2/20 0.37
CHRM1 P11229 2/20 0.37
CHRM3 P20309 2/20 0.37
LMNA P02545 2/20 0.36
MAPK1 P28482 1/20 0.36
ADRB2 P07550 1/20 0.36
ADRB1 P08588 1/20 0.36
ADRB3 P13945 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12681987 0.83 ATM (0.69) L3MBTL1ATMKMT2ALMNA
SCHEMBL14513577 0.83 ATM (0.69) L3MBTL1ATMKMT2ALMNA
SCHEMBL7589576 0.83 L3MBTL1 (0.69) L3MBTL1ATMKMT2ACYP2D6SRC
SCHEMBL10223955 0.83 ATM (0.69) L3MBTL1ATMKMT2ALMNA
SCHEMBL28842867 0.81 L3MBTL1 (0.67) L3MBTL1ATMKMT2ACYP2D6SRC
SCHEMBL15980928 0.81 L3MBTL1 (0.67) L3MBTL1ATMKMT2ACYP2D6SRC
SCHEMBL803808 0.80 ATM (0.65) L3MBTL1ATMKMT2ASMN1; SMN2MMP8
SCHEMBL803886 0.80 ATM (0.65) L3MBTL1ATMKMT2ASMN1; SMN2MMP8
SCHEMBL66018 0.78 L3MBTL1 (0.61) L3MBTL1ATMKMT2ACYP2D6SRC
SCHEMBL17357501 0.78 L3MBTL1 (0.61) L3MBTL1ATMKMT2ACYP2D6SRC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed