SCHEMBL705889

SCHEMBL705889

CC(C)(C)[SiH2]OCc1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.46
IDO1 P14902 1/20 0.43
AGXT P21549 1/20 0.41
ALDH1A1 P00352 2/20 0.41
SLC6A2 P23975 2/20 0.40
TAAR1 Q96RJ0 1/20 0.40
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
LMNA P02545 2/20 0.38
CYP2D6 P10635 1/20 0.38
LTA4H P09960 1/20 0.38
TP53 P04637 1/20 0.37
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA9 Q16790 1/20 0.36
CYP1A2 P05177 1/20 0.36
PTGS1 P23219 1/20 0.36
CYP2C19 P33261 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL989990 0.80 TSHR (0.40) TSHRIDO1AGXTALDH1A1SLC6A2
SCHEMBL713135 0.79 CA1 (0.40) IDO1ALDH1A1SLC6A2TAAR1TDP1
SCHEMBL705124 0.76 IDO1 (0.50) IDO1L3MBTL1LMNAMAOB
SCHEMBL18297903 0.75 TSHR (0.43) TSHRIDO1AGXTALDH1A1SLC6A2
SCHEMBL707596 0.75 IDO1 (0.44) IDO1TDP1L3MBTL1MAOB
SCHEMBL710880 0.75 TSHR (0.52) TSHRIDO1AGXTALDH1A1SLC6A2
SCHEMBL8787686 0.74 TSHR (0.38) TSHRIDO1AGXTALDH1A1SLC6A2
SCHEMBL18297943 0.74 TSHR (0.57) TSHRIDO1AGXTALDH1A1SLC6A2
SCHEMBL6011579 0.73 PTPN1 (0.34) IDO1
SCHEMBL18297923 0.72 TSHR (0.40) TSHRIDO1AGXTALDH1A1SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12109812-B2 Ink jet printing method and ink jet printing apparatus SEIKO EPSON CORPORATION (JP) 2024-10-08 US disclosed
CN-114055975-B Ink jet recording method and ink jet recording apparatus 精工爱普生株式会社 2023-05-12 CN disclosed
CN-113214316-B Phosphorous acid tri (tri-substituted siloxymethyl phenyl) ester, preparation method and application thereof 杭州师范大学 2023-04-18 CN disclosed
US-20220032618-A1 Ink Jet Printing Method And Ink Jet Printing Apparatus SEIKO EPSON CORPORATION (JP) 2022-02-03 US disclosed
US-10259208-B2 Three-dimensional shaped object manufacturing device, method for manufacturing three-dimensional shaped object, and three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2019-04-16 US disclosed
US-9579852-B2 Method for manufacturing three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2017-02-28 US disclosed
US-20160339602-A1 METHOD OF MANUFACTURING THREE-DIMENSIONAL STRUCTURE, THREE-DIMENSIONAL STRUCTURE MANUFACTURING APPARATUS, AND THREE-DIMENSIONAL STRUCTURE SEIKO EPSON CORPORATION (JP) 2016-11-24 US disclosed
US-20160263829-A1 THREE-DIMENSIONAL MODELING APPARATUS, MANUFACTURING METHOD, AND COMPUTER PROGRAM SEIKO EPSON CORPORATION (JP) 2016-09-15 US disclosed
US-9415545-B2 Method of manufacturing three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2016-08-16 US disclosed
US-20160107385-A1 THREE-DIMENSIONAL SHAPED OBJECT MANUFACTURING METHOD AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2016-04-21 US disclosed
US-20090077798-A1 METHOD FOR FORMING CONDUCTIVE POST, METHOD FOR MANUFACTURING MULTILAYERED WIRING SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-26 US disclosed
US-20090071706-A1 METHOD FOR PRODUCING MULTILAYERED WIRING SUBSTRATE, MULTILAYERED WIRING SUBSTRATE, AND ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-19 US disclosed
US-7500895-B2 Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device SEIKO EPSON CORPORATION (JP) 2009-03-10 US disclosed
US-20080317943-A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE SEIKO EPSON CORPORATION (JP) 2008-12-25 US disclosed
US-20080311285-A1 CONTACT HOLE FORMING METHOD, CONDUCTING POST FORMING METHOD, WIRING PATTERN FORMING METHOD, MULTILAYERED WIRING SUBSTRATE PRODUCING METHOD, ELECTRO-OPTICAL DEVICE PRODUCING METHOD, AND ELECTRONIC APPARATUS PRODUCING METHOD SEIKO EPSON CORPORATION (JP) 2008-12-18 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060127563-A1 Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device SEIKO EPSON CORPORATION (JP) 2006-06-15 US disclosed
US-20060019034-A1 Process for producing chemical adsorption film and chemical adsorption film SEIKO EPSON CORPORATION (JP) 2006-01-26 US disclosed
US-20050287392-A1 Organic electroluminescent device, method for producing the same, and electronic apparatus SEIKO EPSON CORPORATION (JP) 2005-12-29 US disclosed
CN-1713787-A Organic electroluminescent device, method for producing the same, and electronic apparatus SEIKO EPSON CORP (JP) 2005-12-28 CN disclosed