SCHEMBL705124

SCHEMBL705124

CC(C)(C)[SiH2]OCCCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.50
LMNA P02545 1/20 0.43
PPARG P37231 2/20 0.41
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
POLB P06746 1/20 0.40
MAOA P21397 3/20 0.40
MAOB P27338 2/20 0.40
SIGMAR1 Q99720 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707596 0.95 IDO1 (0.44) IDO1L3MBTL1MAOAMAOBSIGMAR1
SCHEMBL713135 0.89 CA1 (0.40) IDO1
SCHEMBL705170 0.79 IDO1 (0.55) IDO1LMNAMEN1KMT2AL3MBTL1
SCHEMBL705889 0.76 TSHR (0.46) IDO1LMNAL3MBTL1MAOB
SCHEMBL707359 0.76 IDO1 (0.52) IDO1LMNAMEN1KMT2AL3MBTL1
SCHEMBL10794920 0.75 IDO1 (0.55) IDO1LMNAMEN1KMT2AMAOA
SCHEMBL14498980 0.75 IDO1 (0.55) IDO1LMNAMEN1KMT2AL3MBTL1
SCHEMBL715341 0.74 IDO1 (0.50) IDO1LMNASIGMAR1
SCHEMBL1512799 0.74 IDO1 (0.50) IDO1LMNAMEN1KMT2AL3MBTL1
SCHEMBL8695953 0.74 IDO1 (0.38) IDO1PPARGSIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed