SCHEMBL706430

SCHEMBL706430

CCCC[Si](F)(CCCC)CCC[Si](F)(CCCC)CCCC

nearest known ligand 0.38

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.38
LMNA P02545 1/20 0.38
THRB P10828 1/20 0.35
DNM1 Q05193 1/20 0.30
ALDH1A1 P00352 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706298 0.97 TSHR (0.40) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL704580 0.93 TSHR (0.38) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL703895 0.93 TSHR (0.38) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL15091923 0.90 TSHR (0.41) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL15091616 0.90 TSHR (0.41) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL15091668 0.90 TSHR (0.41) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL20970123 0.90 TSHR (0.35) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL15091544 0.90 TSHR (0.41) TSHRLMNATHRBDNM1ALDH1A1
SCHEMBL708553 0.87 ALDH1A1 (0.30) ALDH1A1
SCHEMBL1538522 0.87 TSHR (0.44) TSHRLMNATHRBDNM1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210384554-A1 LITHIUM SECONDARY BATTERY ELECTROLYTE FOR REDUCING INTERNAL RESISTANCE OF BATTERY AND LITHIUM SECONDARY BATTERY GUANGZHOU TINCI MATERIALS TECHNOLOGY CO., LTD. (CN) 2021-12-09 US disclosed
EP-3819976-A1 LITHIUM SECONDARY BATTERY ELECTROLYTE FOR REDUCING INTERNAL RESISTANCE OF BATTERY AND LITHIUM SECONDARY BATTERY Guangzhou Tinci Materials Technology Co., Ltd (CN) 2021-05-12 EP disclosed
US-10186732-B2 Nonaqueous electrolyte solution for batteries, and nonaqueous electrolyte secondary battery using same DENSO CORPORATION (JP) 2019-01-22 US disclosed
EP-2779299-B1 NONAQUEOUS ELECTROLYTE SOLUTION, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAID ELECTROLYTE SOLUTION ADEKA CORP (JP) 2017-08-02 EP disclosed
EP-2642579-B1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY ADEKA CORP (JP) 2017-07-26 EP disclosed
EP-2642580-B1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY ADEKA CORP (JP) 2017-03-29 EP disclosed
US-9583280-B2 Electricity storage device ADEKA CORPORATION (JP) 2017-02-28 US disclosed
US-9419306-B2 Nonaqueous electrolyte and nonaqueous secondary battery using same ADEKA CORPORATION (JP) 2016-08-16 US disclosed
US-20160190644-A1 RECHARGEABLE LITHIUM BATTERY SAMSUNG SDI CO., LTD. (KR) 2016-06-30 US disclosed
EP-3038194-A1 RECHARGEABLE LITHIUM BATTERY Samsung SDI Co., Ltd. (KR) 2016-06-29 EP disclosed
US-20140242456-A1 NONAQUEOUS ELECTROLYTE AND NONAQUEOUS SECONDARY BATTERY USING SAME ADEKA CORPORATION (JP) 2014-08-28 US disclosed
US-20130323605-A1 NONAQUEOUS ELECTROLYTE SOLUTION FOR BATTERIES, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAME ADEKA CORPORATION (JP) 2013-12-05 US disclosed
EP-2642579-A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY Adeka Corporation (JP) 2013-09-25 EP disclosed
EP-2642580-A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY Adeka Corporation (JP) 2013-09-25 EP disclosed
US-20130236777-A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY ADEKA CORPORATION (JP) 2013-09-12 US disclosed
US-20130177822-A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY ADEKA CORPORATION (JP) 2013-07-11 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed