SCHEMBL706699

SCHEMBL706699

CCCO[Si](CCCC[Si](OCCC)(OCCC)c1ccccc1)(OCCC)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.36
LMNA P02545 2/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 2/20 0.33
HPGD P15428 1/20 0.33
NPC1 O15118 2/20 0.32
RAB9A P51151 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
CYP1A2 P05177 2/20 0.32
CYP2C9 P11712 2/20 0.32
CYP2C19 P33261 2/20 0.32
KCNA3 P22001 1/20 0.31
CYP2D6 P10635 1/20 0.31
CYP19A1 P11511 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20483784 0.96 LTA4H (0.40) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL702211 0.96 LTA4H (0.36) LTA4HLMNAMEN1KMT2AALDH1A1
SCHEMBL19470823 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL20483518 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL19470816 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL19470870 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL19470873 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL19470862 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL19470837 0.95 LTA4H (0.39) LTA4HLMNAALDH1A1NPC1RAB9A
SCHEMBL706755 0.94 LTA4H (0.39) LTA4HLMNAMEN1KMT2ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed