SCHEMBL706967

SCHEMBL706967

Cc1ccccc1[SiH2]Br

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704385 0.79 TRPA1 (0.42)
SCHEMBL2879034 0.77 TSHR (0.53)
SCHEMBL4141599 0.74 TSHR (0.50)
SCHEMBL29776859 0.74
SCHEMBL1054362 0.74
SCHEMBL9504424 0.74 TSHR (0.43)
SCHEMBL6114402 0.72
SCHEMBL18860810 0.72
SCHEMBL3202391 0.72
SCHEMBL9506546 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-0617044-B1 Process for preparing cyclopentadienyl group-containing silicon compound or cyclopentadienyl group-containing germanium compound MITSUI CHEMICALS INC (JP) 1999-01-20 EP disclosed
EP-0514034-B1 Silane products from reaction of solid silicon monoxide with aromatic halides DOW CORNING (US) 1996-02-28 EP disclosed
US-5360921-A REACTING LITHIUM, SODIUM OR POTASSIUM SALT OF A CYCLOPENTADIENE DERIVATIVE WITH A SILICON OR GERMANIUM HALIDE COMPOUND IN THE PRESENCE OF A CYANIDE OR A THIOCYANATE MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) 1994-11-01 US disclosed
EP-0617044-A2 Process for preparing cyclopentadienyl group-containing silicon compound or cyclopentadienyl group-containing germanium compound MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) 1994-09-28 EP disclosed
EP-0292260-B1 Process for producing 1,3-bis(dicarboxyphenyl)-disiloxane derivative or dianhydride thereof HITACHI CHEMICAL CO LTD (JP) 1994-04-13 EP disclosed
US-5166363-A Process for producing 1,3-bis(dicarboxyphenyl)-disiloxane derivative or dianhydride thereof HITACHI CHEMICAL COMPANY, LTD. (JP) 1992-11-24 US disclosed
EP-0514034-A1 Silane products from reaction of solid silicon monoxide with aromatic halides DOW CORNING CORPORATION (US) 1992-11-19 EP disclosed
US-5120520-A In presence of metal or metal-contianing catalyst DOW CORNING CORPORATION (US) 1992-06-09 US disclosed
EP-0292260-A2 Process for producing 1,3-bis(dicarboxyphenyl)-disiloxane derivative or dianhydride thereof Hitachi Chemical Co., Ltd. (JP) 1988-11-23 EP disclosed