⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703483 | 0.87 | — | — | |
| SCHEMBL2956129 | 0.84 | — | — | |
| SCHEMBL931336 | 0.84 | — | — | |
| SCHEMBL707850 | 0.84 | — | — | |
| SCHEMBL3229740 | 0.84 | — | — | |
| SCHEMBL3235537 | 0.84 | — | — | |
| SCHEMBL432577 | 0.82 | — | — | |
| SCHEMBL2524792 | 0.82 | — | — | |
| SCHEMBL2520276 | 0.82 | — | — | |
| SCHEMBL6807259 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240093058-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2024-03-21 | — | — | US | claimed |
| EP-4274866-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | Merck Patent GmbH (DE) | 2023-11-15 | — | — | EP | claimed |
| WO-2022148757-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-14 | — | — | WO | claimed |
| US-20240093058-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2024-03-21 | — | — | US | disclosed |
| EP-4274866-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | Merck Patent GmbH (DE) | 2023-11-15 | — | — | EP | disclosed |
| US-11760903-B2 | Adhesive composition, covering substrate, and cured product | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11739184-B2 | Polysiloxazane compound having alkoxysilyl group, process for producing same, and composition and cured product including same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-29 | — | — | US | disclosed |
| EP-3907265-B1 | ADHESIVE COMPOSITION, COVERED SUBSTRATE, AND CURED PRODUCT | SHINETSU CHEMICAL CO (JP) | 2022-09-28 | — | — | EP | disclosed |
| WO-2022148757-A1 | POLYSILAZANE HARD COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-14 | — | — | WO | disclosed |
| EP-3798252-B1 | POLYSILOXAZANE COMPOUND HAVING ALKOXYSILYL GROUP, PROCESS FOR PRODUCING SAME, AND COMPOSITION AND CURED PRODUCT INCLUDING SAME | SHINETSU CHEMICAL CO (JP) | 2022-06-29 | — | — | EP | disclosed |
| US-11279848-B2 | Polysilazane composition, coated substrate, and multilayer construction | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-03-22 | — | — | US | disclosed |
| EP-2163664-A1 | Method for depositing si-containing film, insulator film, and semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-03-17 | — | — | EP | disclosed |
| US-20100061915-A1 | METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20070178319-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| EP-1564269-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-17 | — | — | EP | disclosed |
| US-20040216641-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |