Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.36 |
| ▸ | NR1H3 | Q13133 | 1/20 | 0.36 |
| ▸ | LTA4H | P09960 | 2/20 | 0.35 |
| ▸ | PCSK9 | Q8NBP7 | 1/20 | 0.35 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.34 |
| ▸ | NAAA | Q02083 | 1/20 | 0.34 |
| ▸ | AR | P10275 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL975134 | 0.94 | KCNH2 (0.39) | TSHRLTA4HNAAAHTTSIGMAR1 | |
| SCHEMBL29199583 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL20483303 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL20483516 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL19470813 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL19470853 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL19470858 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL2101335 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL29199607 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 | |
| SCHEMBL18107979 | 0.92 | KCNH2 (0.42) | NAAASMN1; SMN2HTTCYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10066059-B2 | Sealing material composition for LED | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-09-04 | — | — | US | disclosed |
| US-9884928-B2 | Polymers functionalized with activated nitrogen heterocycles containing a pendant functional group | BRIDGESTONE CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| CN-107075255-A | LED encapsulant compositions | 日产化学工业株式会社 | 2017-08-18 | — | — | CN | disclosed |
| US-20160289354-A1 | POLYMERS FUNCTIONALIZED WITH ACTIVATED NITROGEN HETEROCYCLES CONTAINING A PENDANT FUNCTIONAL GROUP | BRIDGESTONE CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| EP-2599836-B1 | CURABLE COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION | ADEKA CORP (JP) | 2015-03-25 | — | — | EP | disclosed |
| CN-102471581-B | Curable composition for semiconductor encapsulation | ADEKA CORP | 2015-01-28 | — | — | CN | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| CN-102898655-B | Method for preparing optically active polysilane | UNIV HANGZHOU NORMAL | 2014-06-25 | — | — | CN | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| CN-100535054-C | Silica film forming material, silica film and preparation method thereof | FUJITSU LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |
| EP-1999167-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | Novolen Technology Holdings, C.V. (NL) | 2008-12-10 | — | — | EP | disclosed |
| WO-2007106348-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) | 2007-09-20 | — | — | WO | disclosed |
| US-20070213204-A1 | Ziegler-Natta catalyst with in situ-generated donor | NOVOLEN TECHNOLOGY HOLDINGS C.V. | 2007-09-13 | — | — | US | disclosed |
| EP-1769019-A1 | METHOD OF MAKING BRANCHED POLYSILANES | Dow Corning Corporation (US) | 2007-04-04 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| CN-1891757-A | Silica film forming material, silica film and method of manufacturing the same | FUJITSU LTD (JP) | 2007-01-10 | — | — | CN | disclosed |
| WO-2005113648-A1 | METHOD OF MAKING BRANCHED POLYSILANES | DOW CORNING CORPORATION (US) | 2005-12-01 | — | — | WO | disclosed |