SCHEMBL708209

SCHEMBL708209

CCCCCCCCCCCCCCCCCCC(C)CC(N)=O

nearest known ligand 0.55

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ACE2 Q9BYF1 1/20 0.55
GPR84 Q9NQS5 7/20 0.47
CA1 P00915 2/20 0.45
SPHK1 Q9NYA1 1/20 0.45
FFAR1 O14842 1/20 0.45
EPHX1 P07099 1/20 0.44
MAPT P10636 1/20 0.44
TP53 P04637 1/20 0.44
LCK P06239 1/20 0.44
PPARD Q03181 1/20 0.44
ZDHHC20 Q5W0Z9 1/20 0.44
ZDHHC2 Q9UIJ5 1/20 0.44
OPRM1 P35372 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28780138 1.00 ACE2 (0.55) ACE2GPR84CA1SPHK1FFAR1
SCHEMBL10058334 1.00 ACE2 (0.55) ACE2GPR84CA1SPHK1FFAR1
SCHEMBL24608129 1.00 ACE2 (0.55) ACE2GPR84CA1SPHK1FFAR1
SCHEMBL9327533 1.00 ACE2 (0.55) ACE2GPR84CA1SPHK1FFAR1
Hydrochloric Acid SCHEMBL30018030 0.98 ACE2 (0.53) ACE2GPR84CA1SPHK1FFAR1
SCHEMBL2600466 0.98 ACE2 (0.52) ACE2GPR84CA1SPHK1FFAR1
Hydrochloric Acid SCHEMBL27371796 0.96 ACE2 (0.50) ACE2GPR84CA1SPHK1FFAR1
SCHEMBL31278193 0.91 CA2 (0.48) ACE2GPR84CA1EPHX1TP53
SCHEMBL13038451 0.91 CA2 (0.48) ACE2GPR84CA1EPHX1TP53
Hydrochloric Acid SCHEMBL27418380 0.89 CA2 (0.47) ACE2GPR84CA1EPHX1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10429735-B2 Coating agent for reducing roughness of resist pattern, and method for forming resist pattern in which roughness is reduced TOKYO OHKA KOGYO CO., LTD. (JP) 2019-10-01 US disclosed
US-10254651-B2 Coating agent for reducing roughness of resist pattern, and method for forming resist pattern in which roughness is reduced TOKYO OHKA KOGYO CO., LTD. (JP) 2019-04-09 US disclosed
US-20180102246-A1 COATING AGENT FOR REDUCING ROUGHNESS OF RESIST PATTERN, AND METHOD FOR FORMING RESIST PATTERN IN WHICH ROUGHNESS IS REDUCED TOKYO OHKA KOGYO CO., LTD. (JP) 2018-04-12 US disclosed
US-20180101098-A1 COATING AGENT FOR REDUCING ROUGHNESS OF RESIST PATTERN, AND METHOD FOR FORMING RESIST PATTERN IN WHICH ROUGHNESS IS REDUCED TOKYO OHKA KOGYO CO., LTD. (JP) 2018-04-12 US disclosed
US-9417532-B2 Coating agent for forming fine pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-16 US disclosed
US-20150277228-A1 COATING AGENT FOR FORMING FINE PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2015-10-01 US disclosed
US-9063430-B2 Coating agent for forming fine pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-23 US disclosed
US-8124312-B2 Method for forming pattern, and material for forming coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2012-02-28 US disclosed
US-20100255429-A1 FINE PATTERN FORMING METHOD AND COAT FILM FORMING MATERIAL TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-07 US disclosed
US-20100090372-A1 COATING FORMATION AGENT FOR PATTERN MICRO-FABRICATION, AND MICROPATTERN FORMATION METHOD USING THE SAME TOKYO OHKA KOGYO CO., LTD. 2010-04-15 US disclosed
US-20100035177-A1 METHOD FOR FORMING PATTERN, AND MATERIAL FOR FORMING COATING FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-11 US disclosed