SCHEMBL708776

SCHEMBL708776

CCC[Si](CCC)(CCC)OC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706242 0.97
SCHEMBL704851 0.92
SCHEMBL703869 0.92
SCHEMBL4270164 0.89
SCHEMBL4275389 0.89
SCHEMBL705685 0.89
SCHEMBL4082797 0.85
SCHEMBL4074037 0.85
SCHEMBL4074351 0.85
SCHEMBL704902 0.83 LMNA (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119998691-A Antireflection film, liquid composition set, and method for producing antireflection film 日本板硝子株式会社 2025-05-13 CN disclosed
WO-2024080149-A1 ANTI-REFLECTION FILM, LIQUID COMPOSITION, LIQUID COMPOSITION GROUP, AND METHOD FOR MANUFACTURING ANTI-REFLECTION FILM 日本板硝子株式会社 2024-04-18 WO disclosed
CN-109641835-B Method for producing carbamate 国立研究开发法人产业技术综合研究所 2021-07-20 CN disclosed
EP-3508473-B1 METHOD FOR PRODUCING CARBAMIC ACID ESTER AIST (JP) 2021-05-26 EP disclosed
US-10752579-B2 Production method of carbamic acid ester NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2020-08-25 US disclosed
EP-3508473-A1 METHOD FOR PRODUCING CARBAMIC ACID ESTER National Institute of Advanced Industrial Science and Technology (JP) 2019-07-10 EP disclosed
US-20190185420-A1 PRODUCTION METHOD OF CARBAMIC ACID ESTER NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2019-06-20 US disclosed
US-20160027946-A1 OPTICAL DEVICE JSR CORPORATION (JP) 2016-01-28 US disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
US-20080290521-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080292863-A1 SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20050118742-A1 Method for reducing the adhesive properties of MEMS and anti-adhesion-coated device ROBERT BOSCH GMBH (DE) 2005-06-02 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed