SCHEMBL7128732

SCHEMBL7128732

CC(C)(C)NN.CC[Ga](Cl)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methylhydrazine SCHEMBL7127058 0.79
SCHEMBL7123839 0.76
Hydrazine SCHEMBL7120403 0.75
Hydrochloric Acid SCHEMBL3856168 0.71
SCHEMBL138975 0.71
Hydrochloric Acid SCHEMBL22836521 0.67
Hydrochloric Acid SCHEMBL28422264 0.67 MAPT (0.32)
Water SCHEMBL2134234 0.67
Hydrochloric Acid SCHEMBL56953 0.67
Bromide SCHEMBL29012438 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1061083-B1 Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN KOREA RES INST CHEM TECH (KR) 2003-04-02 EP disclosed
US-6329540-B1 FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS FOR FORMING A GALLIUM NITRIDE FILM ON SUBSTRATES KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2001-12-11 US disclosed
EP-1061083-A1 Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN Korea Research Institute of Chemical Technology (KR) 2000-12-20 EP disclosed