⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL61444 | 0.94 | — | — | |
| SCHEMBL28238354 | 0.94 | — | — | |
| SCHEMBL28212064 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL7129274 | 0.89 | — | — | |
| SCHEMBL28263862 | 0.89 | — | — | |
| SCHEMBL10452435 | 0.89 | — | — | |
| SCHEMBL10452434 | 0.89 | — | — | |
| SCHEMBL28321997 | 0.89 | — | — | |
| SCHEMBL9838525 | 0.80 | — | — | |
| SCHEMBL6894777 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1061083-B1 | Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN | KOREA RES INST CHEM TECH (KR) | 2003-04-02 | — | — | EP | disclosed |
| US-6329540-B1 | FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS FOR FORMING A GALLIUM NITRIDE FILM ON SUBSTRATES | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 2001-12-11 | — | — | US | disclosed |
| EP-1061083-A1 | Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN | Korea Research Institute of Chemical Technology (KR) | 2000-12-20 | — | — | EP | disclosed |
| US-5675028-A | Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 1997-10-07 | — | — | US | disclosed |