⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16241875 | 0.87 | — | — | |
| SCHEMBL2575646 | 0.87 | — | — | |
| SCHEMBL10578755 | 0.82 | — | — | |
| SCHEMBL16037 | 0.82 | — | — | |
| SCHEMBL8849452 | 0.82 | — | — | |
| SCHEMBL4865213 | 0.82 | — | — | |
| SCHEMBL7973038 | 0.82 | — | — | |
| SCHEMBL80291 | 0.82 | — | — | |
| SCHEMBL18886767 | 0.82 | — | — | |
| SCHEMBL2579057 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 176 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240170403-A1 | SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-05-23 | — | — | US | claimed |
| US-11923306-B2 | Semiconductor structure having air gaps and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-05 | — | — | US | claimed |
| US-11888045-B2 | Integrated dipole flow for transistor | APPLIED MATERIALS, INC. (US) | 2024-01-30 | — | — | US | claimed |
| US-20230411209-A1 | SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-21 | — | — | US | claimed |
| US-20230290641-A1 | METHOD FOR MANUFACTURING A SEMICONDUCTOR USING SLURRY | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-09-14 | — | — | US | claimed |
| US-11688607-B2 | Slurry | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-06-27 | — | — | US | claimed |
| US-20230067563-A1 | SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-03-02 | — | — | US | claimed |
| US-20220115516-A1 | INTEGRATED DIPOLE FLOW FOR TRANSISTOR | APPLIED MATERIALS, INC. (US) | 2022-04-14 | — | — | US | claimed |
| CN-111180445-B | Ferroelectric memory and method of manufacturing the same | 财团法人工业技术研究院 | 2022-02-25 | — | — | CN | claimed |
| US-11245022-B2 | Integrated dipole flow for transistor | APPLIED MATERIALS, INC. (US) | 2022-02-08 | — | — | US | claimed |
| US-8247323-B2 | Semiconductor device | FUJITSU SEMICONDUCTOR LIMITED (JP) | 2012-08-21 | — | — | US | claimed |
| US-20120132913-A1 | III-V Compound Semiconductor Material Passivation With Crystalline Interlayer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-05-31 | — | — | US | claimed |
| US-20100197046-A1 | SEMICONDUCTOR DEVICE | FUJITSU MICROELECTRONICS LIMITED (JP) | 2010-08-05 | — | — | US | claimed |
| US-7585787-B2 | Semiconductor memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-09-08 | — | — | US | claimed |
| US-7494859-B2 | Semiconductor device having metal gate patterns and related method of manufacture | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-02-24 | — | — | US | claimed |
| US-20080308876-A1 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-12-18 | — | — | US | claimed |
| US-20080079056-A1 | Semiconductor memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. | 2008-04-03 | — | — | US | claimed |
| US-20070080382-A1 | Semiconductor device | FUJITSU LIMITED (JP) | 2007-04-12 | — | — | US | claimed |
| US-20070026596-A1 | Gate electrode structure and method of forming the same, and semiconductor transistor having the gate electrode structure and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. | 2007-02-01 | — | — | US | claimed |
| US-20060226470-A1 | Semiconductor device having metal gate patterns and related method of manufacture | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-10-12 | — | — | US | claimed |