SCHEMBL2575646

SCHEMBL2575646

[Al+3].[Al+3].[Al+3].[Hf+4].[Hf+4].[Hf+4].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[SiH4].[SiH4].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2579057 0.89
SCHEMBL714895 0.87
SCHEMBL165432 0.87
SCHEMBL2443636 0.87
SCHEMBL15392937 0.87
SCHEMBL2219027 0.87
SCHEMBL15861907 0.75
Charcoal, Activated SCHEMBL6363922 0.75
SCHEMBL3962334 0.75
Charcoal, Activated SCHEMBL2729416 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110870048-B Method and apparatus for doping engineering and threshold voltage adjustment by integrated deposition of titanium nitride and aluminum films 应用材料公司 2023-12-12 CN disclosed
US-8049264-B2 Method for producing a dielectric material on a semiconductor device and semiconductor device QIMONDA AG (DE) 2011-11-01 US disclosed
US-20060172489-A1 Method for producing a dielectric material on a semiconductor device and semiconductor device INFINEON TECHNOLOGIES AG (DE) 2006-08-03 US disclosed