⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7147162 | 0.89 | — | — | |
| SCHEMBL15642953 | 0.89 | — | — | |
| SCHEMBL342505 | 0.63 | — | — | |
| SCHEMBL2396940 | 0.63 | — | — | |
| SCHEMBL14973382 | 0.63 | — | — | |
| SCHEMBL14973298 | 0.63 | — | — | |
| SCHEMBL489993 | 0.59 | — | — | |
| SCHEMBL2802642 | 0.59 | — | — | |
| Fluoride SCHEMBL3459832 | 0.58 | — | — | |
| Fluoride SCHEMBL3458737 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1039521-B1 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORP (US) | 2014-04-23 | — | — | EP | claimed |
| US-6524974-B1 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS | LSI LOGIC CORPORATION | 2003-02-25 | — | — | US | claimed |
| EP-1039521-A2 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORPORATION (US) | 2000-09-27 | — | — | EP | claimed |
| EP-1039521-B1 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORP (US) | 2014-04-23 | — | — | EP | disclosed |
| US-6524974-B1 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS | LSI LOGIC CORPORATION | 2003-02-25 | — | — | US | disclosed |
| EP-1039521-A2 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORPORATION (US) | 2000-09-27 | — | — | EP | disclosed |