⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29390232 | 0.82 | — | — | |
| SCHEMBL2196496 | 0.82 | — | — | |
| SCHEMBL30040416 | 0.82 | — | — | |
| SCHEMBL31501204 | 0.82 | — | — | |
| SCHEMBL312955 | 0.82 | — | — | |
| SCHEMBL1512681 | 0.82 | — | — | |
| SCHEMBL8044689 | 0.82 | — | — | |
| SCHEMBL718150 | 0.67 | — | — | |
| SCHEMBL718993 | 0.67 | — | — | |
| SCHEMBL716968 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20030224217-A1 | Metal nitride formation | APPLIED MATERIALS, INC. | 2003-12-04 | — | — | US | claimed |
| US-20150171097-A1 | NONVOLATILE MEMORY DEVICES AND METHODS OF FORMING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-06-18 | — | — | US | disclosed |
| US-8268387-B2 | Method for forming metal line of image sensor | DONGBU HITEK CO., LTD. (KR) | 2012-09-18 | — | — | US | disclosed |
| US-20120049107-A1 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-01 | — | — | US | disclosed |
| US-20100119700-A1 | METHOD FOR FORMING METAL LINE OF IMAGE SENSOR | DONGBU HITEK CO., LTD. (KR) | 2010-05-13 | — | — | US | disclosed |
| US-20060088661-A1 | Methods for chemical vapor deposition of titanium-silicon-nitrogen films | GELEST, INC. | 2006-04-27 | — | — | US | disclosed |
| US-20020197403-A1 | Methods for chemical vapor deposition of titanium-silicon-nitrogen films | GELEST, INC. | 2002-12-26 | — | — | US | disclosed |
| US-20010051215-A1 | Methods for chemical vapor deposition of titanium-silicon-nitrogen films | GELEST, INC. (US) | 2001-12-13 | — | — | US | disclosed |
| WO-2001079584-A1 | METHODS FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM-SILICON-NITROGEN FILMS | GELEST, INC. (US) | 2001-10-25 | — | — | WO | disclosed |